经颅磁声电刺激参数对神经元放电模式的影响分析  

Effect Analysis of Transcranial Magneto-Acousto-Electrical Stimulation Parameters on Neural Firing Patterns

作　　者：张帅[1,2] 崔琨 史勋 王卓[1,2] 徐桂芝[1,2] Zhang Shuai;Cui Kun;Shi Xun;Wang Zhuo;Xu Guizhi(State Key Laboratory of Reliability and Intelligence of Electrical Equipment Hebei University of Technology,Tianjin 300130 China;Key Laboratory of Electromagnetic Field and Electrical Apparatus Reliability of Hebei Province Hebei University of Technology,Tianjin 300130 China)

机构地区：[1]省部共建电工装备可靠性与智能化国家重点实验室(河北工业大学),天津300130 [2]河北省电磁场与电器可靠性重点实验室(河北工业大学),天津300130

出　　处：《电工技术学报》2019年第18期3741-3749,共9页Transactions of China Electrotechnical Society

基　　金：国家自然科学基金(51737003,51877069);河北省科学研究计划(E2015202292,E2015202050,E2017202190,ZD2017020,BJ2016013,C2015005012)资助项目

摘　　要：经颅磁声电刺激(TMAES)是一种超声波和静磁场共同作用于大脑的新型无创脑调控方法,具有较大的刺激深度和良好的聚焦性。为了探索TMAES对脑神经兴奋状态的影响,该文基于H-H神经元模型,仿真了不同发射参数超声波下TMAES对神经元放电模式的影响,并采集了刺激后大鼠的局部场电位对其功率谱进行分析。仿真结果表明,不同参数超声波刺激的神经元会产生不同放电模式。动物实验结果表明超声及静磁场参数均会对经颅磁声电刺激的刺激效果产生一定影响,且其影响程度不同。对于具体神经调控,该文可为得到最优TMAES刺激参数提供理论指导。Transcranial magneto-acousto-electrical stimulation (TMAES) is a new non-invasive brain control method with greater stimulation depth and good focusing, which combines ultrasound and static magnetic field in the brain nerve tissue. In order to explore the effect of TMAES on the state of brain nerve excitation, based on the H-H neuron model, the effects of TMAES on the neuron discharge mode under different emission parameters were simulated, and the local field potential of rats was collected to analyze the power spectrum of the neurons. The simulation results show that different parameters of ultrasonic stimulation of neurons produce different discharge patterns. The results of animal experiments show that both the parameters of ultrasound and static magnetic field have certain effects on the stimulation effect of TMAES, and the effects are different. For specific neural regulation, this paper can provide theoretical guidance for obtaining optimal TMAES stimulus parameters.

关 键 词：经颅磁声电刺激 超声波 H-H 神经元模型 放电模式 局部场电位 

分 类 号：TM12[电气工程—电工理论与新技术]