有机-无机钙钛矿作为有源层的薄膜晶体管制备  

Fabrication of thin film transistors with organic-inorganic perovskite as an active layer

作　　者：陈知新[1] 林金阳[1] CHEN Zhixin;LIN Jinyang(Research Center for Microelectronics Technology,Fujian University of Technology,Fuzhou,350118,PR China)

机构地区：[1]福建工程学院微电子技术研究中心

出　　处：《福建工程学院学报》2019年第4期377-381,共5页Journal of Fujian University of Technology

基　　金：福建省教育厅资助项目(JA15347)

摘　　要：利用有机-无机杂化钙钛矿材料兼有机材料的易加工性和无机半导体优异的载流子迁移率的特点,采用有机-无机杂化MAPbI 3材料制备薄膜晶体管的有源层。利用两步旋涂法,通过控制MAI溶液的浓度定量化控制成膜,制备薄膜晶体管有源层。由该层组成的有机-无机杂化MAPbI 3钙钛矿型的薄膜晶体管具有明显的电场效应,场效应迁移率可达到0.97 cm^2/(V·s),工艺简单、加工温度低,而且适用于柔性显示。Organic-inorganic hybrid perovskite materials have the easy processability of organic materials and the excellent carrier mobility of inorganic semiconductors,so that the active layer of the thin-film transistor is prepared by using the organic-inorganic hybrid MAPbI 3 materials.In the preparation of the thin film transistor as an active layer,by controlling the concentration of MAI solution,the two-step spin-coating method can better quantitatively control the film formation.The organic-inorganic hybrid MAPbI 3 perovskite TFT composed of this layer have obvious electric field effect.Its field effect mobility can reach 0.97 cm 2/(v·s).The process is simple,the processing temperature is low,and it is suitable for flexible display.

关 键 词：有机无机钙钛矿 薄膜晶体管 两步旋涂法 有源层 

分 类 号：TN321.5[电子电信—物理电子学]