硅单晶圆片中V-O2对演变的相场仿真模型  

Simulation Model for V-O2 Pair’s Evolution in Silicon Monocrystalline Wafer Based on Phase Field Theory

作　　者：关小军[1] 关宇昕 王善文 GUAN Xiaojun;GUAN Yuxin;WANG Shanwen(School of Material Science and Engineering,Shandong University,Jinan 250061,China;Outpie Partners B.V.,High Tech Campus,Eindhoven 5656AE,Netherlands)

机构地区：[1]山东大学材料科学与工程学院,山东济南250061 [2]奥派咨询有限责任公司,高科技园区,埃因霍温荷兰5656AE

出　　处：《徐州工程学院学报（自然科学版）》2019年第3期1-6,共6页Journal of Xuzhou Institute of Technology(Natural Sciences Edition)

基　　金：高等学校博士学科点专项科研基金项目（200804220021）;山东大学晶体材料国家重点实验室开放课题（KF1303）

摘　　要：为了开展低温退火过程硅单晶圆片中V-O2对演变的仿真研究,基于相场理论创建了仿真模型,首次完成了介观的V-O2对存在状态及其数量演变的模拟.结果表明:随着退火时间延长,V-O2对数量增加直至饱和且点缺陷相对浓度分布由非平衡态转变为平衡态;这两个演变规律符合实际且产生机理清晰,证实了该模型的合理性及其使用价值.In order to simulatethe V-O2 pair's evolution in silicon monocrystalline wafer in the process of low temperature annealing,a simulation model was established based on the theory of phase field.The simulations on the mesoscopic evolution of V-O2 pair's existence state and its number were first finished.The simulation results show that with the prolongation of annealing time,the number of V-O2 pair increases until to saturation and the relative concentration distribution of point defects changes from non-equilibrium state to equilibrium one;the two evolution laws are in line with the reality and the mechanism is clear,which confirms the application rationality of the model.

关 键 词：仿真 硅单晶圆片 V-O2对 建模 相场理论 

分 类 号：TG111[金属学及工艺—物理冶金]