SOI压阻式面内加速度传感器的交叉灵敏度  

Cross Sensitivity of SOI Piezoresistive In-Plane Acceleration Sensor

作　　者：袁本铸 许煜[2] 贾琛 Yuan Benzhu;Xu Yu;Jia Chen(Beijing Dongda Guoxin Technology Co.,Ltd.,Beijing100095,Chinas;Institute of Precision Engineering and Optical Testing Technology,Xi’an Jiaotong University,Xian 710049,China)

机构地区：[1]北京东大国芯科技有限公司,北京100095 [2]西安交通大学精密工程与光学测试技术研究所,西安710049

出　　处：《微纳电子技术》2019年第10期822-827,共6页Micronanoelectronic Technology

摘　　要：设计了一种基于绝缘衬底上硅(SOI)片的面内振动压阻式加速度传感器,并针对其交叉灵敏度性能进行了研究,分析得出传感器的灵敏度与压阻微梁的轴向应力呈正比关系,并通过仿真说明该结构形式的加速度传感器具有非常低的交叉灵敏度,对检测方向的输出干扰非常小。进行了工艺加工和实验测试,实验结果表明,该面内振动的压阻式加速度传感器在20℃下,工作方向上的灵敏度为0.67 mV/g,而另外两个非工作方向(x轴和z轴)上的交叉灵敏度分别为7.3×10-4%和6.6×10-4%,对工作方向的加速度检测影响非常小,此结构的设计方法对于高性能的加速度传感器的研究具有重要的参考意义。An in-plane vibrational piezoresistive acceleration sensor based on silicon-on-insulator(SOI)wafers was designed,and its cross sensitivity performance was studied.The analysis shows that the sensitivity of the sensor is proportional to the axial stress of the piezoresistive micro-beam.The simulation shows that this structure of the acceleration sensor has very low cross sensitivity and the output interference to the detection direction is relatively slight.The process and experimental tests were carried out.The experimental results show that the sensitivity of the piezoresistive acceleration sensor with in-plane vibration in the working direction is 0.67 mV/gat20 ℃;while the other two directions(x-and z-axis)are non-working directions,the cross sensitivity is 7.3×10-4%for the x-axis and 6.6×10-4%for the z-axis.The two cross sensitivities have little influence on the acceleration detection in the working direction.The design method of this structure has an important reference meaning for the study of high-performance acceleration sensors.

关 键 词：绝缘衬底上硅(SOI)片 面内振动 压阻式传感器 加速度传感器 交叉灵敏度 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TH703[自动化与计算机技术—控制科学与工程]