基于显微红外热点定位系统的发光二极管失效分析  

Failure Analysis of Light Emitting Diode Based on Microscopic Infrared Hot Spot Location System

作　　者：张槐洋 文尚胜[1,2] 方方 唐浩洲 林凯旋 邵沅玲 魏志权 康丽娟[4] 廖少雄 ZHANG Huai-yang;WEN Shang-sheng;FANG Fang;TANG Hao-zhou;LIN Kai-xuan;SHAO Yuan-ling;WEI Zhi-quan;KANG Li-juan;LIAO Shao-xiong(School of Materials Science and Engineering,South China University of Technology,Guangzhou 510640,China;State Key Laboratory of Luminescent Materials and Devices,South China University of Technology,Guangzhou 510640,China;Gold Medal Analytical&Testing Group,Guangzhou 511300,China;Academy of Fine Arts,South China Normal University,Guangzhou 510631,China;Tigerfire(Guangnzhou)Lighting Technology Corporation,Guangzhou 510170,China)

机构地区：[1]华南理工大学材料科学与工程学院,广东广州510640 [2]华南理工大学发光材料与器件国家重点实验室,广东广州510640 [3]广东金鉴实验室科技有限公司,广东广州511300 [4]华南师范大学美术学院,广东广州510631 [5]广州虎辉照明科技公司,广东广州510170

出　　处：《发光学报》2019年第9期1185-1191,共7页Chinese Journal of Luminescence

基　　金：广东省科技计划(2017B010114001,2015B010127004);广东省应用型科技研发专项(2015B010134001);广州市科技计划(201604040004,201604016010,201704030140);广东省扬帆计划(2015YT02C093);中山市科技计划(2016A1009,2017C1011,2018A10013)资助项目~~

摘　　要：失效定位技术是发光二极管失效性分析中的重要组成部分,本文在主流的3种失效定位技术:光子辐射显微技术、光诱导电阻变化、红外热成像显微技术的基础上,提出了一种显微红外热点定位测试系统。该系统通过双线性插值算法使源图像放大至原来的4倍,在使用20μm微距镜头的条件下,能达到与5μm微距镜头接近的效果,降低了LED失效检验成本。利用可见光图像和红外热像图的叠加,提高电压对LED芯片失效点进行锁定,能在大范围内迅速定位LED芯片缺陷所在。在此基础上,结合FIB技术和SEM设备分析LED芯片微观结构,可以进一步分析LED芯片的失效原因,最终得到LED芯片的失效机理。实验结果表明,在初步的缺陷定位中,显微红外热点定位系统可快速地在无损条件下大范围区域内提供LED热数据分布,定位关键失效点,有效地提高了工作效率,降低了失效检测成本。The failure location technology is an important component of the LED failure analysis.In this paper,based on three main failure positioning technologies,namely,emission microscope(EMMI),optical beam induced resistance change(OBIRCH),and infrared thermal imaging(THERMAL),a micro infrared hot spot location system is proposed.By bilinear interpolation algorithm to enlarge the system source image magnification four times,under the condition of using 20-micron micro-lens,the system can achieve the effect close to 5-micron micro-lens,reduce the cost of the LED failure inspection by using the superposition of visible image and infrared thermal image.The LED chip failure point can be locked by increasing the voltage,which can quickly locate the LED chip defect in a wide range.On this basis,by combining FIB technology and SEM equipment to analyze the microstructure of LED chip,the failure reason of LED chip can be further analyzed,and finally the failure mechanism of LED chip can be obtained.The experimental results show that in the initial defect location,the micro-infrared hot spot location system can quickly provide the thermal data distribution of LED in a large area under non-destructive conditions and locate the key failure points,effectively improve work efficiency and reduce the cost of failure detection.

关 键 词：显微红外热点定位 发光二极管 失效分析 失效定位 双线性插值算法 

分 类 号：TN312[电子电信—物理电子学] TN307