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作 者:李辉[1] 胡玉 王坤 全瑞坤 夏桂森 Li Hui;Hu Yu;Wang Kun;Quan Ruikun;Xia Guisen(State Key Laboratory of Power Transmission Equipment&System Security and New Technology Chongqing University,Chongqing,400044,China;Chongqing KK-QIANWEI Wind Power Equipment Co.,Ltd Chongqing,401121,China)
机构地区:[1]输配电装备及系统安全与新技术国家重点实验室(重庆大学),重庆400044 [2]重庆科凯前卫风电设备有限责任公司,重庆401121
出 处:《电工技术学报》2019年第20期4242-4250,共9页Transactions of China Electrotechnical Society
基 金:国家自然科学基金(51675354,51761135014);重庆市重点产业共性关键技术创新专项(cstc2017zdcy-zdyf0124,cstc2017rgzn-zdyf0117);重庆市研究生科研创新(CYS18009)项目资助
摘 要:针对绝缘栅双极型晶体管(IGBT)模块内部并联芯片间动态不均流导致损耗分布存在差异,传统结温计算方法无法准确反映模块内部热分布的问题,提出考虑模块内部封装杂散电感影响的IGBT功率模块动态结温计算方法。首先,建立考虑杂散电感的IGBT等效电路模型,仿真证明功率模块内部电流分布不均的机理。其次,定量推导杂散电感与开通损耗的关系,提出基于多芯片电热耦合影响的IGBT模块内部动态结温计算方法,并通过实验验证。最后,结合双馈风电机组控制策略,建立计及杂散电感影响的风电变流器功率模块电热仿真模型,并与传统模型进行比较。结果表明,所提模型可准确反映模块内部各芯片结温均值及波动幅值的差异性。The loss distribution is different for dynamic non-uniform current between paralleled chips inside insulated gate bipolar transistor(IGBT)module.It is difficult to analyze the internal thermal distribution accurately by traditional junction temperature calculation method.Thus,a dynamic junction temperature calculation method was proposed by considering the influence of the internal stray inductance in IGBT module.Firstly,the IGBT equivalent circuit model with the internal stray inductance was established,and the mechanism of dynamic non-uniform current distribution was demonstrated.Then,the relationship between the turn-on losses and stray inductance parameters was derived.The internal dynamic junction temperature calculation was presented based on the multi-chip electro-thermal coupling effects,and testified by the experiments.Finally,combined with the doubly fed wind turbine control strategy,an electro-thermal decoupling simulation model considering the stray inductance for the wind power converter module was presented and compared with the traditional model.The results show that the proposed model could accurately reflect the average and fluctuation amplitude of junction temperature for each chip inside the IGBT module.
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