顶发光单色绿光OLED微型显示器件发光层掺杂特性研究  

Research on the Performance of Luminescent Layer Doping in Top Emitting Monochrome Green OLED Micro-displays

作　　者：钱福丽 王光华 杨启鸣[1] 段良飞 高思博 王灿 周允红 段瑜 季华夏 QIAN Fuli;WANG Guanghua;YANG Qiming;DUAN Liangfei;GAO Sibo;WANG Can;ZHOU Yunhong;DUAN Yu;JI Huaxia(Yunman North OLiGHTEK Opto-Electronic Technology Co.,Ltd,Kunming 650223,China;Kunming Institute of Physics,Kunming 650223,China)

机构地区：[1]云南北方奥雷德光电科技股份有限公司,云南昆明650223 [2]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2019年第10期913-917,共5页Infrared Technology

基　　金：国家自然科学基金项目(61604064);云南省应用基础研究面上项目(2016FB112);云南省技术创新人才培养项目(2017HB111)

摘　　要：本文设计了一种磷光顶发射结构制备单色高亮绿光OLED微型显示器件,器件结构为:ITO/2-TNATA/NPB/MCP:Ir(ppy)3/Bphen/LiF/Mg:Ag。为获得低功耗、高亮度的绿光OLED微型显示器件,采用开口率大、益于集成的顶发射结构器件,并对发光层掺杂机制进行实验研究,通过改变掺杂比例获得较佳的器件性能。研究表明,在掺杂比分别为1.0%、1.5%、1.8%、2.0%、2.3%、2.5%的绿光OLED器件中,2.0%的掺杂器件较其他比例的性能更优,通过进一步优化掺杂研究显示,发光层主体材料MCP与掺杂料Ir(ppy)3的最佳掺杂比例为1:0.02,主体材料薄膜厚度为250A。在20mA/cm^2的电流密度下,得到器件电压为3.62V,亮度为4622cd/cm^2,色坐标(X,Y)为(0.33,0.61)。A monochrome high brightness green top emission OLED micro-displays is designed by the phosphor emitting structure:ITO/2-TNATA/NPB/MCP:Ir(ppy)3/Bphen/LiF/Mg:Ag.The top emitting structure device with large aperture ratio and easy to integrate was prepared,exhibiting performance of low-power and high brightness.The best performance is obtained by changing the doping ratio in the luminous layer.The results showed that the 2.0%of the doped ratio is better than other ratios such as 1.0%,1.5%,1.8%,2.3%,2.5%in the green OLED micro-displays.Doped ratio is further optimized,and the best rate of the host materials MCP and doped material Ir(ppy)3 is 1:0.02,the film thickness of host material is 250A.When current density is 20mA/cm2,voltage is 3.62V,the brightness is 4622 cd/cm2,chromaticity coordinates(CIE X,Y)(0.33,0.61).

关 键 词：单色绿光 顶发射OLED微型显示器 发光层 光电特性 

分 类 号：TN383.1[电子电信—物理电子学]