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作 者:曲良 陈岚[1,2] 郝晓冉 倪茂[1] 李莹[1,2] QU Liang;CHEN Lan;HAO Xiao ran;NI Mao;LI Ying(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)
机构地区:[1]中国科学院微电子研究所,北京100029 [2]中国科学院大学,北京100049
出 处:《电子设计工程》2019年第21期140-145,共6页Electronic Design Engineering
基 金:国家物联网与智慧城市重点专项对接:传感信息精确感知与智能处理关键技术研究(Z181100003518002);北京市科技专项:科技新星与领军人才(Z171100001117147)
摘 要:在传统终端存储架构中,DRAM内存普遍存在静态刷新功耗高、存储密度难以提升等问题;基于NAND flash的外存也因其与CPU之间巨大的性能差异而成为制约终端系统性能提升的重要瓶颈。新型非易失存储器(Non-volatile Memory,NVM)具有静态功耗低、读写速度与DRAM相近、可按字节访问、非易失等优势,为解决传统存储架构存在的问题提供了希望。本文面向嵌入式系统,提出了基于DRAM+NVM混合内存结构及其存储管理方案。采用目标程序在混合内存中进行选择性分配的方法,克服NVM写功耗高,写速度慢的不足,使具有不同读写特征的段分配到不同的存储器中,使内存系统功耗较传统DRAM内存平均降低45.2%;提出了非易失缓冲区,将外存中的常用数据存储在缓冲区中,使外存访问时间较无缓冲区的情况平均降低56.0%。In traditional terminal memory system,DRAM memory generally has the problems of high static refresh power consumption and difficulty in increasing storage density.NAND flash-based storage has become an important bottleneck restricting the performance improvement of terminal system due to its huge performance gap with CPU.The emerging non-volatile memory(NVM)has advantages of low static power consumption,similar reading and writing speed to DRAM,byte addressability and non-volatility,which provides hope for solving the problems of traditional memory system.This paper proposes a DRAM+NVM hybrid memory system and management scheme for embedded systems.The proposed method of selective allocation of target program in hybrid memory overcomes the shortcomings of high power consumption and slow write speed of NVM,which allocates segments with different read and write characteristics to different memory,and the power consumption of memory is reduced by 45.2%on average compared with that of traditional DRAM memory.A non-volatile data buffer is proposed to store frequently used data in external storage,which reduces the external storage access time by 56.0%on average compared with the case without buffer.
分 类 号:TP368.1[自动化与计算机技术—计算机系统结构]
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