Al-Nb共掺杂对CaCu3Ti4-x(Al1/2Nb1/2)xO12陶瓷介电性能的影响  

Effects of Al-Nb Co-doping on Dielectric Properties of CaCu3Ti4-x(Al1/2Nb1/2)xO12 Ceramics

作　　者：李旺[1] 杜江萍[1] 唐鹿[1] 罗哲[1] 薛飞[1] 杨佳豪 吴召林 LI Wang;DU Jiangping;TANG Lu;LUO Zhe;XUE Fei;YANG Jiahao;WU Zhaolin(The Center of Collaboration and Innovation,Jiangxi University of Technology,Nanchang 330098,China;College of Mechanical Engineering,Jiangxi University of Technology,Nanchang 330098,China)

机构地区：[1]江西科技学院协同创新中心,南昌330098 [2]江西科技学院机械工程学院,南昌330098

出　　处：《中国陶瓷》2019年第11期26-30,共5页China Ceramics

基　　金：江西省教育厅科学技术研究项目（GJJ180985,GJJ171029）;江西科技学院博士科研启动基金（8100200256）

摘　　要：采用固相反应法制备了Al-Nb共掺杂的CaCu3Ti4-x(Al1/2Nb1/2)xO12(x=0,0.01,0.03,0.05)陶瓷,研究了Al-Nb掺杂量对于CaCu3Ti4O12(CCTO)陶瓷物相结构、微观形貌和介电性能的影响,并对Al-Nb掺杂影响CCTO陶瓷介电性能的机理进行了分析。结果表明,在x≤0.05时,Al-Nb共掺杂不会影响CCTO的物相组成,但当x=0.05时,会抑制CCTO陶瓷晶粒的生长;当x=0.03时,介电常数在20 Hz^1 MHz的频率范围内显著提高,同时介电损耗在小于10 kHz的频率范围明显降低,综合介电性能得到提升。分析认为,Al-Nb共掺杂时会增大陶瓷晶粒电阻,同时也会提高晶粒的半导化程度,从而增强了CCTO陶瓷的IBLC介电响应。CaCu3Ti4-x(Al1/2Nb1/2)xO12(x=0,0.01,0.03,0.05) ceramics co-doped by Al-Nb were prepared by the solid state reaction method. The phase compositions, microstructures and dielectric properties of the CaCu3Ti4-x(Al1/2Nb1/2)xO12 ceramics were investigated. The mechanism of influence of Al-Nb co-doping on the dielectric properties of CCTO ceramics was analyzed. It has been found that Al-Nb co-doping had no influence on phase composition of CCTO when x ≤ 0.05,while the growth of CCTO grains was inhibited as x=0.05.When x=0.03, the dielectric constant of CCTO ceramic was significantly enhanced over the frequency range of 20 Hz ~ 1 MHz, and moreover, the dielectric loss was reduced simultaneously before the frequency range of 10 kHz, achieving an improved dielectric performance. It is considered that AlNb co-doping can increase the grain resistance and the semiconducting of grains, which enhances the IBLC dielectric response of CCTO ceramics.

关 键 词：CACU3TI4O12 巨介电性能 掺杂 介电损耗 

分 类 号：TQ174.758[化学工程—陶瓷工业]