新一代功率半导体β-Ga2O3器件进展与展望  

Progresses and Prospects of New-Generation Power Semiconductor β-Ga2O3 Devices

作　　者：刁华彬 杨凯 赵超[1,2] 罗军 Diao Huabin;Yang Kai;Zhao Chao;Luo Jun(Integrated Circuit Advanced Process R&D Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China;School of Microelectronics,University of Science and Technology of China,Hefei 230000,China)

机构地区：[1]中国科学院微电子研究所集成电路先导工艺研发中心,北京100029 [2]中国科学院大学,北京100049 [3]中国科学技术大学微电子学院,合肥230000

出　　处：《微纳电子技术》2019年第11期875-887,901,共14页Micronanoelectronic Technology

摘　　要：Ga2O3是一种新兴的超宽禁带半导体材料,具有超宽带隙4.8 eV、超高理论击穿电场8 MV/cm以及超高的Baliga品质因数等优良特性,作为下一代高功率器件材料其越来越受到人们的关注。首先,回顾了宽禁带半导体材料β-Ga2O3的基本性质,包括β-Ga2O3的晶体结构和电学性质,简述了基于β-Ga2O3制造的功率器件,主要包括肖特基势垒二极管(SBD)和金属-氧化物-半导体场效应晶体管(MOSFET)。总结回顾了β-Ga2O3SBD和MOSFET近年来的研究进展,比较了不同结构器件的特性,并分析了目前β-Ga2O3功率器件存在的问题。分析表明,β-Ga2O3用于高功率和高压电子器件具有巨大潜力。β-Ga2O3 is an emerging ultra-wide bandgap semiconductor material with excellent characteristics,such as the ultra-wide bandgap of 4.8 eV,ultra-high theoretical breakdown electric field of 8 MV/cm and ultra-high Baligaquality factor,and draws more and more attention as the next generation high-power device material.Firstly,the basic properties of β-Ga2O3,a wide bandgap semiconductor material,are reviewed including the crystal structure and electrical properties of β-Ga2O 3.Besides,the power devices based on β-Ga2O3 are briefly described,mainly including Schottky barrier diodes(SBDs)and metal-oxide-semiconductor field effect transistors(MOSFETs).The recent developments of β-Ga2O3 SBDs and MOSFETs are reviewed,the characteristics of different structural devices are compared,and current existing problems of β-Ga2O3 power devices are analyzed.The analysis shows that β-Ga2O3 has great potential for high power and high voltage electronic devices.

关 键 词：β-Ga2O3 超宽禁带半导体 功率器件 肖特基势垒二极管(SBD) 金属-氧化物-半导体场效应晶体管(MOSFET) 

分 类 号：TN313.4[电子电信—物理电子学] TN386.1