Effects of ratio of hydrogen flow on microstructure of hydrogenated microcrystalline silicon films deposited by magnetron sputtering at 100 ℃  

氢稀释比对磁控溅射低温(100℃)沉积氢化微晶硅薄膜微结构特性的影响（英文）

作　　者：WANG Lin-qing ZHOU Yong-tao WANG Jun-jun LIU Xue-qin 王林青;周永涛;王军军;刘雪芹(School of Science,Chongqing University of Technology,Chongqing 400054,China;Chongqing Key Laboratory of Green Energy Materials Technology and Systems,Chongqing 400054,China;College of Materials Science and Engineering,Chongqing University of Technology,Chongqing 400054,China;Chongqing Collaborative Innovation Center for Brake Tribological Materials,Chongqing 400054,China)

机构地区：[1]School of Science,Chongqing University of Technology,Chongqing 400054,China [2]Chongqing Key Laboratory of Green Energy Materials Technology and Systems,Chongqing 400054,China [3]College of Materials Science and Engineering,Chongqing University of Technology,Chongqing 400054,China [4]Chongqing Collaborative Innovation Center for Brake Tribological Materials,Chongqing 400054,China

出　　处：《Journal of Central South University》2019年第10期2661-2667,共7页中南大学学报（英文版）

基　　金：Projects(51505050,51805063) supported by the National Natural Science Foundation of China for Young Scholars;Projects(KJ1500942,KJQN201801134) supported by the Scientific and Technological Research Program of Chongqing Education Commission of China;Projects(cstc2017jcyjAX0075,cstc2015jcyj A50033) supported by the Chongqing Research Program of Basic Research and Frontier Technology,China

摘　　要：Hydrogenated microcrystalline silicon(μc-Si:H)films were prepared on glass and silicon substrates by radio frequency magnetron sputtering at 100°C using a mixture of argon(Ar)and hydrogen(H2)gasses as precursor gas.The effects of the ratio of hydrogen flow(H2/(Ar+H2)%)on the microstructure were evaluated.Results show that the microstructure,bonding structure,and surface morphology of theμc-Si:H films can be tailored based on the ratio of hydrogen flow.An amorphous to crystalline phase transition occurred when the ratio of hydrogen flow increased up to 50%.The crystallinity increased and tended to stabilize with the increase in ratio of hydrogen flow from 40%to 70%.The surface roughness of thin films increased,and total hydrogen content decreased as the ratio of hydrogen flow increased.Allμc-Si:H films have a preferred(111)orientation,independent of the ratio of hydrogen flow.And theμc-Si:H films had a dense structure,which shows their excellent resistance to post-oxidation.在低温(100℃)条件下采用磁控溅射在玻璃和硅(100)衬底上沉积氢化微晶硅(μc-Si:H)薄膜,研究不同氢稀释比对微晶硅薄膜微结构特性的影响。结果表明:薄膜从非晶相过渡到了微晶相当氢稀释比增加到约50%,氢化微晶硅薄膜的结晶率随氢稀释比从40%增加到70%先增加后趋于稳定;薄膜的表面粗糙度随着氢稀释比的增加而增加,氢含量的变化趋势与之相反;所制备的氢化微晶硅薄膜都具有(111)择优取向,与氢稀释比无关,且薄膜结构致密。

关 键 词：hydrogenated microcrystalline silicon films radio frequency magnetron sputtering ratio of hydrogen flow low temperature MICROSTRUCTURE 

分 类 号：O48[理学—固体物理]