软轴单晶炉晶体生长的固有干扰因素分析  

Analysis on Intrinsic Interference Factors for Crystal Growth of Flexible Shaft Single Crystal Furnace

作　　者：张志坚 池蓉 罗凤灵 ZHANG Zhi-jian;CHI Rong;LUO Feng-ling(Yunnan Yunxin Silicon Material Co.,Ltd.,Qujing,Yunnan 655000,China;Yunnan Keli New Materials Co.,Ltd.,Kunming,Yunnan 650051,China)

机构地区：[1]云南云芯硅材股份有限公司,云南曲靖655000 [2]云南科力新材料股份有限公司,云南昆明650051

出　　处：《云南冶金》2019年第5期65-71,共7页Yunnan Metallurgy

摘　　要：随着半导体产业技术发展,提高单晶材料生长的成晶率和晶体内在品质越来越重要。国内目前普遍采用软轴单晶炉进行锗、硅单晶棒生产,软轴单晶炉相对硬轴单晶炉具有结构紧凑,运行可靠、设备成本低等的优点,但是软轴单晶炉由于软轴系统类似于单摆和弹簧振子的结构特点,容易产生固有共振干扰,存在对晶体品质不利的影响因素。对这些干扰因素、解决措施进行了简要分析和讨论。Increasing of the crystallization rate of single crystal materials' growth and the interior quality of crystal is more andmore important along with the development of semiconductor industrial technology. The flexible shaft single crystal furnace is widely usedfor production of germanium, silicon single crystal rods at present in domestic, flexible shaft has the advantages of compact structure,reliable operation, low cost of equipment and so on compared with the hard shaft single crystal furnace, but because of the structuralfeatures of flexible system of flexible shaft single crystal furnace is similar to the structural features of simple pendulum and springoscillator, the intrinsic resonant interaction can be generated easily, which has the adverse impact factors to the crystal quality. All theinterference factors, countermeasures are analyzed and discussed simply.

关 键 词：单晶 软轴单晶炉 固有干扰 

分 类 号：TF063[冶金工程—冶金物理化学]