Effect of growth temperature of GaAsxSb1-x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate  

作　　者：Jing Zhang Hong-Liang Lv Hai-Qiao Ni Shi-Zheng Yang Xiao-Ran Cui Zhi-Chuan Niu Yi-Men Zhang Yu-Ming Zhang 张静;吕红亮;倪海桥;杨施政;崔晓然;牛智川;张义门;张玉明(School of Microelectronics,Xidian University and the State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,Xi’an 710071,China;State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)

机构地区：[1]School of Microelectronics,Xidian University and the State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,Xi’an 710071,China [2]State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

出　　处：《Chinese Physics B》2019年第11期364-369,共6页中国物理B（英文版）

基　　金：Project supported by the National Defense Advanced Research Project,China(Grant No.315 xxxxx301);the National Defense Innovation Program,China(Grant No.48xx4);the National Key Technologies Research and Development Program,China(Grant No.2018YFA0306101);the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032);the National Natural Science Foundation of China(Grant No.61505196)

摘　　要：The InAs/AlSb heterostructures with step-graded GaAsxSb1-x metamorphic buffer layers grown on Si substrates by molecular beam epitaxy are studied. The step-graded GaAsxSb1-x metamorphic buffer layers are used to relax the strain and block defects at each interface of the layers. Meanwhile, adding Sb to GaAs is also beneficial to suppressing the formation of dislocations in the subsequent materials. The influences of the growth temperature of the step-graded GaAsxSb1-x metamorphic buffer layer on the electron mobility and surface topography are investigated for a series of samples. Based on the atomic force microscopy（AFM）, high resolution x-ray diffraction（HRXRD）, reciprocal space map（RSM）, and Hall measurements, the crystal quality and composition of GaAsxSb1-x layer are seen to strongly depend on growth temperature while keeping the Ga growth rate and V/III ratio constant. The results show that the highest electron mobility is 10270 cm2/V·s and the roughness is 4.3 nm for the step-graded GaAsxSb1-x metamorphic buffer layer grown at a temperature of 410℃.The InAs/AlSb heterostructures with step-graded GaAsxSb1-x metamorphic buffer layers grown on Si substrates by molecular beam epitaxy are studied. The step-graded GaAsxSb1-x metamorphic buffer layers are used to relax the strain and block defects at each interface of the layers. Meanwhile, adding Sb to GaAs is also beneficial to suppressing the formation of dislocations in the subsequent materials. The influences of the growth temperature of the step-graded GaAsxSb1-x metamorphic buffer layer on the electron mobility and surface topography are investigated for a series of samples. Based on the atomic force microscopy(AFM), high resolution x-ray diffraction(HRXRD), reciprocal space map(RSM), and Hall measurements, the crystal quality and composition of GaAsxSb1-x layer are seen to strongly depend on growth temperature while keeping the Ga growth rate and Ⅴ/Ⅲ ratio constant. The results show that the highest electron mobility is 10270 cm^2/V·s and the roughness is 4.3 nm for the step-graded GaAsxSb1-x metamorphic buffer layer grown at a temperature of 410℃.

关 键 词：Si STICKING COEFFICIENTS growth temperature GaAsxSb1-x METAMORPHIC buffer 

分 类 号：TN3[电子电信—物理电子学]