S波段200 W硅LDMOS功率管研制  

Development of S-band 200 W Si-LDMOS Power Transistor

作　　者：刘洪军[1] 赵杨杨 鞠久贵 杨兴[1] 王佃利[1] 杨勇 LIU Hongjun;ZHAO Yangyang;JU Jiugui;YANG Xing;WANG Dianli;YANG Yong(Nanjing Electronic Devices Institute,Nanjing, 210016,CHN)

机构地区：[1]南京电子器件研究所

出　　处：《固体电子学研究与进展》2019年第5期333-338,共6页Research & Progress of SSE

摘　　要：研制了具有高频高增益特性的硅LDMOS芯片,采用0.35μm精细栅实现高频率性能,CoSi2/PolySi栅工艺技术降低电阻,Ti/W金属场板优化漂移区电场分布降低反馈电容,并采用等平面工艺技术提高芯片一致性。采取参数仿真优化内匹配设计,并通过多个LDMOS芯片合成实现大功率输出。最终实现的S波段大功率硅LDMOS器件性能为:在32 V工作电压,3.1~3.5 GHz频带内,300μs脉宽,15%占空比的工作条件下,输出功率大于200 W,增益大于9 dB,效率大于42%。A high frequency and high gain silicon LDMOS transistor was developed,which used 0.35μm gate to achieve high frequency performance,CoSi2/PolySi gate technology to reduce gate resistance,Ti/W metal plate optimized field in drift region to reduce feedback capacitance,and isoplanar process was adopted to improve LDMOS chip uniformity.By optimizing parameter simulation internal matching design and utilizing multi-chip synthesis,high power output was obtained.The final characters of the S-band LDMOS transistor are as follows:under the condition of 32 V supply voltage,3.1~3.5 GHz operating frequency,300μs pulse width and 15%duty cycle,the output power of transistor is over 200 W,power gain is more than 9 dB and efficiency is higher than 42%.

关 键 词：硅横向扩散金属-氧化物-半导体 S波段 功率管 

分 类 号：TN385[电子电信—物理电子学]