1700 V/1200 A Si/SiC混合模块研制与性能对比  

Development and Performance Comparison of 1 700 V/1 200 A Si/SiC Hybrid Module

作　　者：冯科 杨晓菲 王昭 FENG Ke;YANG Xiaofei;WANG Zhao(CRRC Yongji Electric Co.,Ltd.Xian,710018,CHN)

机构地区：[1]中车永济电机有限公司

出　　处：《固体电子学研究与进展》2019年第5期371-374,共4页Research & Progress of SSE

摘　　要：介绍了一种由Si IGBT与SiC JBS组合封装的Si/SiC混合模块,利用SiC JBS单载流子器件没有反向恢复特性的特点,提升IGBT模块的特性。对Si/SiC混合模块的结构、工艺、测试结果进行了描述,与Si模块相比,在芯片结温为125℃时,Si/SiC混合模块的续流二极管的反向恢复电流减少了86.7%,反向恢复能量减少了98.1%,恢复时间减少了约82.1%。根据相同工况条件下的损耗计算,与Si模块相比,Si/SiC混合模块的续流二极管功耗减小了64%,Si/SiC混合模块的IGBT芯片的损耗与Si模块持平,总功耗减小了7.1%。A kind of Si/SiC hybrid module of Si IGBT combined with SiC JBS was introduced.The characteristics of IGBT module were improved by taking advantage of the fact that the single carrier device of SiC JBS have no reverse recovery characteristic.The structure,process and testing results of hybrid module were reported.Compared with the traditional Si module,the recovery current,recovery energy and recovery time of the fast-recovery diode in Si/SiC hybrid module at the junction temperature of 125℃are reduced by 86.7%,98.1%,82.1%respectively.According to the loss calculation under the same operating conditions,compared with the Si module,the fast-recovery diode loss of the Si/SiC hybrid module is reduced by 64%,the IGBT chip loss of the Si/SiC hybrid module is the same as that of the Si module and the total power consumption is reduced by 7.1%.

关 键 词：碳化硅 结势垒控制肖特基二极管 绝缘栅双极型晶体管 混合模块 

分 类 号：TN389[电子电信—物理电子学]