半导体硅片酸腐蚀后形状实验研究  

Experimental Study on Shape of Semiconductor Wafers after Acid Etching

作　　者：宁永铎 周旗钢[2] 钟耕杭 张建 赵伟 汪奇 Ning Yongduo;Zhou Qigang;Zhong Genghang;Zhang Jian;Zhao Wei;Wang Qi(Grinm Semiconductor Materials Corp.,Ltd.,Beijing 100088,China;General Research Institute for Nonferrous Metals,Beijing 100088,China)

机构地区：[1]有研半导体材料有限公司,北京100088 [2]北京有色金属研究总院,北京100088

出　　处：《稀有金属》2019年第10期1062-1067,共6页Chinese Journal of Rare Metals

基　　金：国家重点研发计划项目(2017YFB0305603)资助

摘　　要：以半导体硅片制备工艺中的酸腐蚀过程为研究对象,采用硅片几何参数检测设备的原始数据为数据源,借助空间统计手段和数据可视化技术,基于实验研究酸腐蚀过程中硅片的转动、外加气泡扰动因素对半导体硅片酸腐蚀后形状的影响。通过实验数据分析,建立硅片酸腐蚀剥离去除量的分布与相应各因素之间的经验模型,根据各实验条件的腐蚀去除量的分布,结合酸腐蚀的化学反应机理,分析不同工艺条件下硅片形状的成因。实验结果表明:富硝酸体系中,在同等酸液配比条件下,腐蚀剂相对于硅材料表面的流速会影响化学反应中的物质交换效率,化学腐蚀速率与腐蚀剂相对流动速率显著相关;硅片的转动速率、外界引入的气泡扰动都会影响酸液的流动特征,进而改变物质交换效率的空间分布,最终影响硅片腐蚀后的形状。研究表明,硅片酸腐蚀后的几何形状受漩涡效应和边缘效应的共同影响。用宏观去除量模型、漩涡效应和边缘效应的经验模型叠加构造酸腐蚀硅片的经验模型,验证结果显示模型误差较小,可以预报在转动、气泡二因素交互作用下,酸腐蚀后硅片的几何形状。Taking the acid etching process in the manufacture process of semiconductor silicon wafer as the research object, using the raw data from the geometric parameter detection device as the data source and by means of spatial statistics and data visualization technology, the influence of etching process parameters on the shape of the etched wafer such as the rotation of the silicon wafer and the addition of bubble disturbance was studied based on the experimental data. Through the analysis of experimental data, an empirical model between the removal distribution and the acid etching factors was established. Based on the removal amount distribution according to each experimental condition, the causes of silicon wafer shape under different process conditions were analyzed combined with the chemical reaction mechanism of acid etching. The experimental results showed that under the same acid ratio, the flow rate of the etchant relative to the silicon wafer surface would affect the mass transfer efficiency in the chemical reaction and the rate of chemical etching was significantly correlated with the relative flow rate of the etchant in a rich nitric acid system. The rotation rate of the silicon wafer and the bubble disturbance introduced by the outside could affect the flow characteristics of the acid liquid, thereby changing the spatial distribution of the material exchange efficiency, and finally affecting the shape of the etched silicon wafer. The geometry of the acid-etched wafer was affected by both the vortex effect and the edge effect. The model of the acid-etched silicon wafer shape was superimposed by the empirical model of macroscopic removal model, vortex effect and edge effect. The verification results showed that the model error was small, and the geometric shape of acid-etched silicon wafer could be predicted under the interaction of two factors: rotation speed and bubble distribution.

关 键 词：半导体硅片 酸腐蚀 总厚度差 硅片形状 

分 类 号：TN304[电子电信—物理电子学]