Cu2BaSn（S,Se）4薄膜研究进展  

Current progress in Cu2BaSn（S, Se）4 thin film

作　　者：易庆华 谢娟 王晨 邹贵付 Qinghua Yi;Juan Xie;Chen Wang;Guifu Zou(Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province,Soochow Institute for Energy and Materials Innovations,College of Energy,Soochow University,Suzhou 215006,China;Jiangsu Laboratory of Advanced Functional Materials,College of Physics and Engineering,Changshu Institute of Technology,Changshu 215500,China)

机构地区：[1]苏州大学能源学院,能源与材料创新研究院,江苏省先进碳材料与可穿戴能源技术重点实验室,苏州215006 [2]常熟理工学院物理与电子工程学院,江苏先进功能材料实验室,常熟215500

出　　处：《科学通报》2019年第32期3297-3308,共12页Chinese Science Bulletin

基　　金：国家重点基础研究发展计划(2015CB358600);国家自然科学基金(21671141,51664047);江苏省自然科学基金(BK20181037)资助

摘　　要：Cu2BaSn(S,Se)4薄膜是在Cu2ZnSn(S,Se)4的基础上发展提出的一类新型半导体材料.具有与Cu2ZnSn(S,Se)4相类似的性质特点,如直接带隙、带隙可调(1.5~2.1 e V)、p型半导体特性、大吸光系数、高载流子迁移率和良好化学稳定性等.更重要的是,Cu2ZnSn(S,Se)4中Cu和Zn原子半径相似,易出现铜锌位置互换形成反位缺陷.而Cu2BaSn(S,Se)4中Ba和Cu的原子半径相差较大,反位缺陷形成能较高,不易形成缺陷.因此通过将Ba取代Zn后形成的Cu2BaSn(S,Se)4能缓解反位缺陷和带边拖尾等问题,使得Cu2BaSn(S,Se)4成为了替代Cu2ZnSn(S,Se)4的可选材料之一.另外Cu2BaSn(S,Se)4具有优异的光电特性,使其成为光电领域非常重要的材料之一.本文主要阐述了近几年来Cu2BaSn(S,Se)4薄膜的研究进展.包括基本特性,如结构和吸光特性等、各种生长方法的优缺点和在太阳能电池及光电化学等领域的研究进展情况.最后总结并展望了Cu2BaSn(S,Se)4的应用前景,为未来的研究提供方向.The inexhaustible solar energy is regarded as a candidate to displace the diminishing fossil fuel resources and reduce greenhouse emissions.Photovoltaic and photoelectrochemical process provide a pathway for directly converting solar light into electricity power and clean hydrogen energy.It is significant to explore a promising and abundant material for utilization the solar energy.Cu2ZnSn(S,Se)4 has a direct bandgap,suitable bandgap(1.0–1.5 eV),high absorption efficient,which has been used as a absorbed layer in thin film solar cell achieving a power conversion efficiency of 12.6%and a photocathode gaining a photocurrent density of 13 m A/cm^2.However,the close ionic sizes between Cu^+(0.91A)and Zn^2+(0.88A)in Cu2ZnSn(S,Se)4 leads to the antisite disorder and associated band tailing,and limits the performance improvement.According to the theoretical calculation,substituted the Cu or Zn with the large radius atom can efficiently reduce the antisite disorder.The large Ba substitutes Zn in Cu2ZnSn(S,Se)4 forming Cu2BaSn(S,Se)4,which can suppress the antisite defects.According to the Schockley-Queisser theory,the photocurrent density of the photocathode based on bare Cu2BaSn(S,Se)4 thin film is14.5 m A/cm^2 under AM 1.5 G illumination and the maximum power conversion efficiency of the thin film solar cell based on a pure Cu2BaSn(S,Se)4(Eg=2.0 e V)is 22%.Therefore,it has attracted a great deal of attentions in Cu2BaSn(S,Se)4 thin films.From a special perspective,this review summarizes the progress of Cu2BaSn(S,Se)4 thin films in recent years.First,we outline the physical properties of Cu2BaSn(S,Se)4.According to the experimental and theoretical results,it reveals that the Cu2BaSn(S,Se)4 has less cationic disordering and associated band tailing than that in Cu2ZnSn(S,Se)4,which indicates the Cu2BaSn(S,Se)4 will be a promising candidate to Cu2ZnSn(S,Se)4.Moreover,the Cu2BaSn(S,Se)4 has two crystal structures and the phase transition from trigonal(P31)to orthorhombic(Ama2)with a increasing Se/(S+Se)ratio.Due to the ph

关 键 词：Cu2BaSn(S Se)4 Cu2ZnSn(S Se)4 反位缺陷 太阳能电池 光电化学 

分 类 号：N[自然科学总论]