HgCdTe红外探测器芯片微管电极的制备与应用  

Development and application of microtubes for HgCdTe detectors

作　　者：张轶 刘世光 张敏 杨斌 ZHANG Yi;LIU Shi-guang;ZHANG Min;YANG Bin(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所

出　　处：《激光与红外》2019年第11期1350-1352,共3页Laser & Infrared

摘　　要：介绍了一种用于超大面阵碲镉汞探测器的新型微管电极。使用常规金属沉积、光刻和刻蚀设备,即可在碲镉汞芯片上制备微管电极。在倒装互连时,碲镉汞芯片通过微管电极插入读出电路上的铟球,实现与读出电路互连。使用微管电极互连,互连所需压力比现有工艺降低了约65%,并降低了倒装互连工艺对碲镉汞芯片平坦度和互连精度的要求,大幅度提高了互连成功率。A new type of micro-tubes and their application in ultra large HgCdTe arrays were introduced in this paper.HgCdTe arrays processed with micro-tubes can be prepared using conventional metal deposition,lithography and etching equipment.During flip interconnection,HgCdTe chip interconnects with readout circuit by inserting indium ball in readout circuit through micro-tube electrode.Using micro-tube electrode interconnection,the interconnect pressure is about 65 % lower than the existing process.Furthermore in the flip interconnect process,the requirements of the chip flatness and interconnect accuracy were reduced,and the interconnect success rate was greatly improved.

关 键 词：微管电极 倒装互连 碲镉汞 

分 类 号：TN214[电子电信—物理电子学]