正向偏置(p)SiC/(n)GaN异质结构稳态导电特性的模拟  

Simulation of Steady-state Conduction of (p)SiC/(n)GaN Heterostructures Biased by Forward Voltage

作　　者：张锦涛 赵少云 韦文生 郑君鼎 何明昌 ZHANG Jintao;ZHAO Shaoyun;WEI Wensheng;ZHENG Junding;HE Mingchang(College of Mathematics,Physics and Electronic Information Engineering,Wenzhou University,Wenzhou,China 325035)

机构地区：[1]温州大学数理与电子信息工程学院

出　　处：《温州大学学报（自然科学版）》2019年第4期36-46,共11页Journal of Wenzhou University(Natural Science Edition)

基　　金：国家自然科学基金项目(61774112)

摘　　要：本文利用MATLAB数值模拟了不同晶相(6H、4H、3C)p型掺杂SiC与六方相n型掺杂GaN构成异质结构的正向稳态导电特性.讨论了(p)SiC/(n)GaN异质结构模型,分析了正向偏压、温度对异质结构内载流子分布的影响,考虑了异质结构内载流子复合率随正向偏压的变化,对比了不同温度异质结构的电容-电压特性,探究了异质结构p区及n区不同少子寿命和掺杂浓度、温度等情况下的主要电流成份与正向偏压的关系.模拟数据与文献的实验结果吻合,可指导SiC/GaN异质结构双极晶体管等器件的制造.The forward steady-state conduction characteristics of(p)SiC/(n)GaN heterostructures(HSs) with different polytype SiC and wurtzite phase GaN were numerically simulated via MATLAB programming in this paper. Modeling for the HS was discussed;the influence of forward biased voltage and temperature on the distribution of carriers within the HSs was investigated;the variation of carrier recombination rate with the applied voltage was considered;the capacitance-voltage(C-V) characteristics of HSs with different temperatures were compared;and the relations between forward current density and voltage in cases of different lifetime of minority carriers and doping levels in p-type and n-type regions of HSs, and temperature were probed. The simulated data agree with the experimental results of the literatures, which can guide the manufacturing of SiC/GaN heterostructure bipolar transistors etc.

关 键 词：(p)SiC/(n)GaN异质结构 载流子传导 电容-电压特征 电流-电压特征 模拟 

分 类 号：TN304.2[电子电信—物理电子学]