Carbon nanotube/silicon heterojunctions for photovoltaic applications  

作　　者：Xiangang Hu Pengxiang Hou Chang Liu Huiming Cheng 

机构地区：[1]Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang,110016,China [2]School of Materials Science and Engineering,University of Science and Technology of China,Hefei,230026,China [3]Tsinghua-Berkeley Shenzhen Institute,Tsinghua University,Shenzhen,518055,China

出　　处：《Nano Materials Science》2019年第3期156-172,共17页纳米材料科学（英文版）

基　　金：supported by the Ministry of Science and Technology of China (Grant 2016YFA0200101);the National Natural Science Foundation of China (Grants 51625203, 51532008, 51521091, 51572264, 51772303);the Chinese Academy of Sciences (Grants 174321KYSB20160011)

摘　　要：Photovoltaic devices have rapidly developed in recent years as they seek to address the ever-increasing energy requirements and environmental issues.Due to their simple structure and easy,low-temperature fabrication,heterojunctions of carbon nanotube(CNT)films and silicon(Si)have been used in solar cells,photodetectors and optoelectronic gas sensors.Significant progress has been made on the development of high-performance CNT/Si heterojunction devices,in particular,CNT/Si solar cells.Here,we give a comprehensive overview of state-of-theart CNT/Si heterojunction devices.The effects of the structure of the CNTs,the interface layer and the silicon structure on the performance of CNT/Si solar cells are analyzed.In addition,potential ways to further improve the performance of such photovoltaic devices are proposed.Finally,the key challenges and developing trends in CNT/Si heterojunction photovoltaic devices are discussed.Photovoltaic devices have rapidly developed in recent years as they seek to address the ever-increasing energy requirements and environmental issues. Due to their simple structure and easy, low-temperature fabrication,heterojunctions of carbon nanotube(CNT) films and silicon(Si) have been used in solar cells, photodetectors and optoelectronic gas sensors. Significant progress has been made on the development of high-performance CNT/Si heterojunction devices, in particular, CNT/Si solar cells. Here, we give a comprehensive overview of state-of-theart CNT/Si heterojunction devices. The effects of the structure of the CNTs, the interface layer and the silicon structure on the performance of CNT/Si solar cells are analyzed. In addition, potential ways to further improve the performance of such photovoltaic devices are proposed. Finally, the key challenges and developing trends in CNT/Si heterojunction photovoltaic devices are discussed.

关 键 词：Carbon NANOTUBE HETEROJUNCTION SOLAR cell PHOTODETECTOR Gas sensor 

分 类 号：TB[一般工业技术]