Inverse Stone-Thrower-Wales defect and transport properties of 9AGNR double-gate graphene nanoribbon FETs  

逆Stone-Thrower-Wales缺陷和9AGNR双栅石墨烯纳米带FET的传输特性（英文）

作　　者：Mohammad Bagher NASROLLAHNEJAD Parviz KESHAVARZI 

机构地区：[1]Electrical and Computer Engineering Department, Semnan University

出　　处：《Journal of Central South University》2019年第11期2943-2952,共10页中南大学学报（英文版）

摘　　要：Defect-based engineering of carbon nanostructures is becoming an important and powerful method to modify the electron transport properties in graphene nanoribbon FETs. In this paper, the impact of the position and symmetry of the ISTW defect on the performance of low dimensional 9AGNR double-gate graphene nanoribbon FET (DG-GNRFET) is investigated. Analyzing the transmission spectra, density of states and current-voltage characteristics shows that the defect effect on the electron transport is considerably varied depending on the positions and the orientations (the symmetric and asymmetric configuration) of the ISTW defect in the channel length. Based on the results, the asymmetric ISTW defect leads to a more controllability of the gate voltages over drain current, and drain current increases more than 5 times. The results have also con rmed the ISTW defect engineering potential on controlling the channel electrical current of DG-AGNR FET.基于缺陷的碳纳米结构工程正在成为改变石墨烯纳米带FET中电子传输性质的重要且有效的方法.本文研究了ISTW缺陷的位置和对称性对低维9NR双栅石墨烯纳米带FET(DG-GNRFET)性能的影响.分析透射光谱和态密度和电流?电压特性表明,对电子传输的缺陷影响根据ISTW缺陷在沟道长度中的位置和取向(对称和非对称配置)而显着变化.基于该结果,非对称ISTW缺陷导致栅极电压对漏极电流的可控性更强,并且漏极电流增加超过5倍.结果还证实了ISTW在控制DG-AGNR FET的沟道电流方面的缺陷工程潜力.

关 键 词：inverse Stone-Thrower-Wales defect electronic transport properties graphene nanoribbon tight binding NEGF formalism 

分 类 号：TN3[电子电信—物理电子学]