基于MoS2/SiO2范德华异质结的VO2薄膜转移打印研究  

Transfer Printing of VO2 Thin Films Using MoS2/SiO2 Van Der Waals Heterojunctions

作　　者：肖敏 孙睿智 李艳芳[1] 康同同 秦俊[1] 杨润 毕磊[1] XIAO Min;SUN Rui-Zhi;LI Yan-Fang;KANG Tong-Tong;QIN Jun;YANG Run;BI Lei(National Engineering Research Center of Electromagnetic Radiation Control Materials,University of Electronic Science and Technology of China,Chengdu 611731,China)

机构地区：[1]电子科技大学国家电磁辐射控制材料工程技术研究中心

出　　处：《无机材料学报》2019年第11期1161-1166,共6页Journal of Inorganic Materials

基　　金：国家自然科学基金(61475031,51522204);科技部重点研发计划(2016YFA0300802)~~

摘　　要：近年来,柔性电子器件由于在物联网、生物电子等领域的潜在应用引起了研究者的广泛关注。功能氧化物材料在柔性聚合物中的集成已被证明是实现高性能柔性电子器件的有效方式。由于功能氧化物薄膜通常需要高温制备,直接在柔性聚合物基底上合成高质量的氧化物薄膜仍然是一个巨大的挑战。本研究提出了一种基于MoS2/SiO2范德华异质结转移打印大面积VO2薄膜的方法,即利用MoS2和SiO2薄膜亲疏水性能的不同,可以仅使用去离子水解离MoS2/SiO2范德华异质结界面,成功将Si/SiO2/MoS2/SiO2/VO2多层膜结构上的VO2薄膜转印到Si、SiO2/Si以及柔性基底上。X射线衍射(XRD)结果显示,转印前后VO2薄膜的晶体结构没有差异,变温Raman光谱和变温红外反射光谱证明了转印前后VO2薄膜良好的金属-绝缘体转变性能。本研究提供了一种有效的功能氧化物薄膜转印方法,在不引入牺牲层和腐蚀性溶剂的条件下,实现了VO2薄膜在任意基底上的低温集成,为柔性可穿戴电子器件的研制提供了一种新思路。In recent years, flexible electronic devices have attracted much attention due to the potential applications in the fields of the Internet of Things and bioelectronics. The integration of functional oxide materials in flexible polymers has been proven an effective way to achieve high performance flexible electronic devices. However, due to high fabrication temperatures, the synthesis of high-quality oxide films directly on flexible polymer substrates remains a significant challenge. This study proposed a method for transferring printing large-area VO2 film based on MoS2/SiO2 van der Waals heterojunctions. Due to different hydrophilic and hydrophobic properties of MoS2 and SiO2 films, we can dissociate the MoS2/SiO2 van der Waals heterojunction interface only by using deionized water, and transfer printing the VO2 films from Si/SiO2/MoS2/SiO2/VO2 to Si, SiO2/Si and flexible substrates. X-ray diffraction(XRD) results showed that the crystal structure of VO2 films has no difference before and after the transfer process. Temperature-dependent Raman spectrum and infrared reflectance spectrum demonstrate good metal-insulator transition(MIT) performance of VO2 films before and after transferring printing. These results indicate an effective method for transferring printing functional oxide films, which enables low-temperature integration of VO2 thin films on arbitrary substrates without introducing sacrificial layer and corrosive solvents. Our study provides a new way for integrating functional oxides for flexible wearable electronic devices applications.

关 键 词：二氧化钒薄膜 转移打印 低温集成 柔性电子器件 

分 类 号：O484[理学—固体物理]