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作 者:杨慧毓 李相鑫 许璐 李文杰 吴仪 Yang Huiyu;Li Xiangxin;Xu Lu;Li Wenjie;Wu Yi(Beijing NAURA Microelectronics Equipment Co.,Ltd.,Beijing,102600)
机构地区:[1]北京北方华创微电子装备有限公司
出 处:《电子测试》2019年第22期93-94,共2页Electronic Test
摘 要:集成电路自从诞生以来,特征尺寸已经不断缩减,随之而来的是对晶圆清洗的要求越来越高。兆声波技术的应用能够降低颗粒污染物与硅片之间的黏附力,是有效提高清洗效果的手段。在65nm技术代及以下,常规的兆声波清洗会造成晶圆微结构的损伤,无法被制造工艺所接受,只能用于非敏感结构的清洗,如晶圆衬底清洗、Pre-thermal diffusion、pre-epi、CMP、wafer reclaim等清洗。通过开发无损伤兆声波清洗装置可以有效地去除颗粒污染物,在40nm及以下的半导体清洗工艺中应用前景广阔。Since the birth of integrated circuits, the feature size has been shrinking, followed by the wafer cleaning requirements are increasingly high.The application of megasonic technology can reduce the adhesion between particle pollutants and silicon wafer, which is an effective means to improve the cleaning effect.Under the 65 nm technology, conventional megasonic cleaning would cause damage to the wafer microstructure, which could not be accepted by the manufacturing process. Therefore, it could only be used for cleaning non-sensitive structures, such as cleaning pre-thermal diffusion pre-epi CMP wafer reclaim on wafer substrate.By developing a damage-free ultrasonic cleaning device, particle contaminant can be effectively removed, and it has a broad application prospect in semiconductor cleaning process of 40 nm and below.
分 类 号:TN3[电子电信—物理电子学]
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