网格结构微环谐振电光开关阵列的特性分析  

Analysis of Cross-grid Microring Resonator Electro-optic Switch Array

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作  者:汪玉海 贺可川 马宁伯 王春旭 张永玲 宋明星 王国峰[1] 秦政坤[1] WANG Yu-hai;HE Ke-chuan;MA Ning-bo;WANG Chun-xu;ZHANG Yong-ling;SONG Ming-xing;WANG Guo-feng;QIN Zheng-kun(Optoelectronic Materials and Devices Engineering Center of Jilin Province High Education,College of Information Technology,Jilin Normal University,Siping,Jilin 136000,China)

机构地区:[1]吉林师范大学吉林省高校光电材料与器件工程中心信息技术学院

出  处:《光子学报》2019年第11期197-205,共9页Acta Photonica Sinica

基  金:国家自然科学基金(No.21701047);吉林省科技发展计划项目(Nos.20180520191JH,20180520199JH);吉林省教育厅"十三五"科学技术项目(Nos.JJKH20191006KJ,JJKH20191024KJ,JJKH20180762KJ)~~

摘  要:设计了由N+1条水平通道、N条竖直通道和2 N个微环构成的电光开关阵列器件,并对其传输特性进行了分析.通过在列微环上加载不同的工作电压,实现相应通道的开关功能.以5×4通道8微环结构为例,取波导芯的宽度与厚度均为1.5μm,波导芯与电极之间的限制层厚度为2.0μm,电极厚度为0.05μm,微环与通道之间的耦合距离为0.1μm.当开关电压为8 V时,该器件的插入损耗在2.79~4.31 dB范围内,串扰在-20 dB以下,消光比在12.5 dB以上.The electro-optic switch array device with N+1 horizontal channels,N vertical channels and 2 N microrings is designed,and the transmission characteristics are analyzed.When the operation voltage is applied on the microrings in the array unit in various ways,the switching function of the corresponding horizontal channel can be realized.Taking the structure of 5×4 channels and 8 microrings as an example,the width and thickness of the waveguide core are chosen as 1.5μm,the thickness of the buffer layer between the waveguide core and electrode is set as 2.0μm,the thickness of the metal electrode and the coupling gap between the microring and channel are selected as 0.05μm and 0.1μm,respectively.When the switching voltage is 8 V,the insertion loss of the structure ranges between 2.79 and 4.31 dB,the crosstalk is below-20 dB,and the extinction ratio is over 12.5 dB.

关 键 词:微环谐振 电光开关 插入损耗 串扰 消光比 

分 类 号:TN256[电子电信—物理电子学]

 

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