铌镁酸钡缓冲层对锆钛酸铅薄膜漏电流的抑制  

Inhibition of Leakage Current in Lead Zirconate Titanate Thin Films by Barium Magnesium Niobate Buffer Layer

作　　者：谢丹丹 周静[1] 吴智 沈杰[1,3] XIE Dan-dan;ZHOU Jing;WU Zhi;SHEN Jie(State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,School of Materials Science and Engineering,Wuhan University of Technology,Wuhan 430070,China;School of Materials and Chemistry Engineering,Hunan Institute of Technology,Hengyang 421002,China;Engineering Research Center of Nano-Geo Materials of Ministry of Education,China University of Geosciences,Wuhan 430074,China)

机构地区：[1]武汉理工大学,材料科学与工程学院,材料复合新技术国家重点实验室,武汉430070 [2]湖南工学院,材料与化学工程学院,衡阳421002 [3]中国地质大学,纳米矿物材料及应用教育部工程研究中心,武汉430074

出　　处：《硅酸盐通报》2019年第11期3403-3408,共6页Bulletin of the Chinese Ceramic Society

基　　金：国家自然科学基金(51572205,51802093);装备预研教育部联合基金(6141A02033209);中央高校基本科研业务费专项资金资助(2018III019);纳米矿物材料及应用教育部工程研究中心开放项目(NGM2019KF005)

摘　　要：将铌镁酸钡(Ba(Mg1/3Nb2/3)O3,BMN)作为缓冲层,通过溶胶-凝胶法制备了锆钛酸铅(Pb(Zr0.52Ti0.48)O3,PZT)铁电薄膜。探究BMN缓冲层对PZT铁电薄膜介电、铁电性能影响。研究发现:BMN缓冲层不仅可以改善PZT薄膜晶化生长,同时阻碍了PZT与Pt的互扩散而降低了漏电流。由于对漏电流的抑制作用,适当厚度BMN缓冲层的引入可改善PZT的铁电性能,但随着缓冲层厚度的增加,由于其分压作用,复合膜铁电性减弱。当厚度为10nm时,薄膜的综合性能最好:介电常数εr=1612.03,介电损耗tanδ=0.024,剩余极化值Pr=31.65μC/cm^2,矫顽场Ec=71.5kV/cm,漏电流密度J=4.4×10^-6A/cm^2。Lead zirconate titanate(Pb(Zr 0.52 Ti 0.48)O 3,PZT)ferroelectric thin film was deposited on Pt/Ti/SiO 2/Si(100)by the sol-gel preparation technology with using barium magnesium niobate(Ba(Mg 1/3 Nb 2/3)O 3,BMN)buffer layer.The effect of the BMN buffer layer on the dielectric and ferroelectric properties of PZT ferroelectric thin films was investigated.It is found that the BMN buffer layer can not only improve the crystal growth of PZT thin films,but also hinder the interdiffusion of PZT and Pt and reduce the leakage current.Due to the suppression of leakage current,the introduction of a suitable thickness BMN buffer layer can improve the ferroelectric property of PZT,but as the thickness of the buffer layer increases,the ferroelectricity of the composite film is weakened due to its partial pressure.When the thickness is 10 nm,the film has the best overall performance:dielectric constantεr=1612.03,dielectric loss tanδ=0.024,residual polarization value P r=31.65μC/cm ^2,the coercive field E c=71.5 kV/cm,and the leakage current density J=4.4×10^-6 A/cm^ 2.

关 键 词：铌镁酸钡缓冲层 锆钛酸铅铁电薄膜 介电损耗 铁电性能 漏电流密度 

分 类 号：TB34[一般工业技术—材料科学与工程]