三硒化二铟纳米线的尺寸依赖性光电导研究  

The Study on Size-Dependent Photoconductivity in In2Se3 Nanowires

作　　者：朱伟林 张文昊 钟子平 廖良欣 夏治洋 李钦亮 ZHU Weilin;ZHANG Wenhao;ZHONG Ziping;LIAO Liangxin;XIA Zhiyang;LI Qinliang(Jiangxi Key Laboratory of Nanomaterials and Sensors,College of Physics and Communication Electronics,Jiangxi Normal University,Nanchang Jiangxi 330022,China)

机构地区：[1]江西省微纳材料与传感器件重点实验室江西师范大学物理与通信电子学院

出　　处：《江西师范大学学报（自然科学版）》2019年第6期582-586,共5页Journal of Jiangxi Normal University(Natural Science Edition)

基　　金：国家自然科学基金(61664005);江西省自然科学基金(20161BAB211012,20181BAB201014)资助项目

摘　　要：利用气-液-固(VLS)生长机理合成出高质量的单晶三硒化二铟(IN2Se3)纳米线,所合成的IN2Se 3纳米线的直径分布在20~200 nm范围内,长度为几十微米.采用标准的微纳加工工艺,成功构建了基于单根IN2Se3纳米线的器件,其器件结构为电阻型结构.经过对一系列具有不同直径大小的IN2Se 3纳米器件的光电导性能研究,该类器件的光电导性能表现出明显的尺寸依赖性,为构建基于IN2Se3纳米线的高效光探测器提供了关键的实验和理论依据.High quality single crystalline IN2Se 3 nanowires have been synthesized by vapour-liquid-solid(VLS)mechanism.The diameter and length of IN2Se 3 nanowires are 20~200 nm and several tens of micrometers,respectively.Using standard micro-nano processing technology,the resistance-typed nanodevice based on single IN2Se 3 nanowire is fabricated.Through studying the photoconductive properties of single IN2Se 3 nanowire with different diameters,the photoconductive properties of such devices show obvious size dependence,which provides a significant experimental and theoretical guidance for the fabrication of high efficient photodetectors based on IN2Se 3 nanowires.

关 键 词：IN2Se 3纳米线 光电导 尺寸效应 

分 类 号：O484[理学—固体物理]