Spin-valve magnetoresistance in single-phaseε-Fe2～3N film  

作　　者：Zhikuo TAO Lilei XU Henan FANG Lin CHEN Jiangwei CHEN 

机构地区：[1]College of Electronic and Optical Engineering & College of Microelectronics,Nanjing University of Posts and Telecommunications

出　　处：《Science China(Information Sciences)》2019年第12期237-239,共3页中国科学（信息科学）（英文版）

基　　金：supported by National Natural Science Foundation of China(Grant Nos.61574079,61106009,11704197);Open Foundation of Jiangsu Province Key Laboratory of Photonic and Electronic Materials Science and Technology(Grant No.2018JSGDXX016)

摘　　要：Dear editor,ε-Fe2~3N has been investigated as a potential candidate in spintronics devices[1].With the changing ratio of Fe:N,the magnetic behaviors and the spin transport properties of ε-Fe2~3N can be manipulated[2,3].In particular,the Curie temperatuTe changes from 9 K for ε-Fe2N to 575 K for ε-Fe3N,and the room temperature spin-polarization can be controlled bet ween 0 to 0.5 with different Fe:N ratio[4].Therefore,ε-Fe2~3N provides an advanced platform for the design of spintronics devices such as magnetic tunnel junction or spinbased field effect transistor.

关 键 词：FILM tempera EDITOR 

分 类 号：TM2[一般工业技术—材料科学与工程]