不同氮氧比对N掺杂ZnO:Al薄膜结构及光电性能的影响  

Effect of Different Nitrogen-Oxygen Ratios on the Structure and Photoelectric Properties of N-doped ZnO:Al Films

作　　者：高立华 高松华[1,2] 陈礼炜 GAO Lihua;GAO Songhua;CHEN Liwei(Key Laboratory of Equipment Intelligence Control of Fujian Province,Sanming 365004,China;School of Mechanical&Electrical Engineering,Sanming University,Sanming 365004,China)

机构地区：[1]装备智能控制福建省高校重点实验室,福建三明365004 [2]三明学院机电工程学院,福建三明365004

出　　处：《新乡学院学报》2019年第12期16-18,26,共4页Journal of Xinxiang University

基　　金：国家自然科学基金项目(11804189);福建省自然科学基金项目(2017J01714)

摘　　要：采用射频磁控溅射技术,在不同氮氧比条件下,经过退火处理制备了N掺杂ZnO∶Al薄膜。对样品进行X射线衍射(XRD)、探针扫描显微镜(FAM)、透过率和电阻测试。结果表明:薄膜表面呈现柱状结构,当氮氧比为9∶1时,c轴择优取向最强。在可见光(500~800 nm)范围内,平均透过率都达到了90%以上。随着氮氧比增大,薄膜电阻先增大后减小,后又略微增大。当氮氧比由3∶1增加到9∶1时,由于N作为施主和受主掺杂的浓度不同,薄膜实现了由n型导电转变为p型导电。N-doped ZnO:Al films were deposited by RF magnetron sputtering and annealing under different nitrogen-oxygen ratios.The samples were characterized with X-ray diffraction(XRD),probe scanning microscope(FAM),transmittance and electrical resistance.The results showed that the surface of the film took on columnar structure growth,and the c-axis’preferred orientation was the strongest when the nitrogen-oxygen ratio was 9:1.The average visible(500~800 nm)transmittance was more than 90%.With the increase of nitrogen-oxygen ratio,the film resistance first increased and then decreased;later,the film resistance slightly increased.When the nitrogen-oxygen ratio increased from 3:1to 9:1,because of different concentrations of N as donor and acceptor,the thin film could be changed from n-typed conduction to p-typed one.

关 键 词：氮氧比 施主 受主 光电性能 

分 类 号：O484.4[理学—固体物理]