硅流体芯片的仿真建模及几何参数影响分析  

Modeling, Simulation and Geometric Parameter Influences of Silicon Valve

作　　者：周铖杰 吴央芳[2] 夏春林[2] 王玉翰[2] 陆倩倩[2] ZHOU Cheng-jie;WU Yang-fang;XIA Chun-lin;WANG Yu-han;LU Qian-qian(School of Mechanical Engineering,Changzhou Universit,Changzhou,Jiangsu 213164;Department of Mechatronic Engineering,Zhejiang University City College,Hangzhou,Zhejiang 310015)

机构地区：[1]常州大学机械工程学院,江苏常州213164 [2]浙江大学城市学院机械电子工程系,浙江杭州310015

出　　处：《液压与气动》2019年第12期107-113,共7页Chinese Hydraulics & Pneumatics

摘　　要：为研究硅流体芯片的特性,通过多物理场仿真得到了芯片输入电压与中间层杠杆机构输出位移之间的近似传递函数,结合AMESim软件进行了气路仿真研究。将气路仿真结果与实验结果进行对比,验证了仿真的有效性。利用气路仿真模型分析了静态增益和时间常数对双芯片结构阶跃响应及滞回特性的影响。使用多物理场仿真模型着重探讨了几何参数对V型电热微致动器的影响。仿真结果表明:致动器输出位移的大小主要与筋的倾角、跨长、对数有关,几何参数的改变对静态增益影响明显,时间常数主要与跨长有关。In order to study the characteristics of the silicon valve, the approximate transfer function between the input voltage and the output displacement of the mid-layer lever mechanism is obtained through the multi-physical field simulation, and the pneumatic simulation is conducted with the AMESim software. The simulation results are compared with the experimental results to verify the effectiveness of the simulation. The effects of the static gain and the time constant on the step response and the hysteresis characteristics of the two-chip structure are analyzed by the pneumatic simulation model. The multi-physical field simulation model is used to focus on the influence of the geometric parameters on the V-shaped electrothermal actuator. The simulation results show that the output displacement of the actuator is related to the inclination angle, span length and number of the rib. The change of the geometric parameters has obvious influence on the static gain. And the time constant is mainly related to the span length.

关 键 词：硅流体芯片 多物理场仿真 V型电热微致动器 几何参数 

分 类 号：TH137[机械工程—机械制造及自动化] TH138.52