基于SOI结构的辐照传感器的辐照响应特性研究  

Radiation response characteristics of an embeddable SOI radiation sensor

作　　者：孙静[1] 郭旗[1] 郑齐文[1] 崔江维[1] 何承发[1] 刘海涛 刘许强[2] 刘梦新[3] SUN Jing;GUO Qi;ZHENG Qiwen;CUI Jiangwei;HE Chengfa;LIU Haitao;LIU Xuqiang;LIU Mengxin(Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Key Laboratory of Functional Materials and Devices for Special Environments,Xinjiang Key Laboratory of Electronic Information Material and Device,Urumqi 830011,China;Institute of Nuclear Physics and Chemistry,China Academy of Engineering Physics,Mianyang 621999,China;Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院新疆理化技术研究所中国科学院特殊环境功能材料与器件重点实验室新疆电子信息材料与器件重点实验室,乌鲁木齐830011 [2]中国工程物理研究院核物理与化学研究所,绵阳621999 [3]中国科学院微电子研究所,北京100049

出　　处：《核技术》2019年第12期43-48,共6页Nuclear Techniques

基　　金：国家自然科学基金(No.11605283、No.U1630141、No.11975305);中国科学院西部之光项目(No.2017-XBQNXZ-B-008)资助~~

摘　　要：绝缘体上硅埋氧层(Silicon-On-Insulator Buried Oxide,SOI BOX)P型金属氧化物半导体场效应晶体管(Positive channel Metal Oxide Semiconductor,PMOS)是用于新型高灵敏度辐射探测仪的一种关键器件。通过试验研究了SOI BOX PMOS的辐照响应特性,包括辐照偏置对SOI BOX PMOS的辐射响应灵敏度的影响、不同辐射剂量率环境下的SOI BOX PMOS的灵敏度响应差异、辐照后的SOI BOX PMOS的退火特性及其对辐射响应敏感度影响,以及SOI BOX PMOS沟道宽长比与其灵敏度的关系等,并对试验结果进行了必要的理论分析。实验结果表明:正偏置辐照的器件对电荷的收集响应灵敏度明显高于零偏置辐照的器件;阈值电压的辐照变化几乎不受退火效应影响;相比于宽沟道器件,窄沟道器件的阈值电压漂移更为明显。实验研究为新型辐射剂量探测仪的研制打下了基础。[Background]With the rapid development of the aerospace industry,deep space environments,space stations,and long-life satellites have set higher requirements for space environment radiation dose detection technology.Positive channel metal oxide semiconductor(PMOS)tubes based on silicon-on-insulator buried oxide(SOI BOX)is one of key candidate device for next-generation radiation detectors of high-sensitivity and wide-range irradiation sensors.[Purpose]This study aims to investigate radiation response characteristics of an embeddable SOI radiation sensor.[Methods]Comprehensive radiation experiments were preformed to study the influence of irradiation bias on the sensitivity of SOI BOX PMOS,the sensitivity response difference in various radiation dose rate,the annealing characteristics of SOI BOX PMOS after irradiation and its influence on the sensitivity of radiation response,and the relationship between the width to length ratio of SOI box PMOS and its sensitivity.[Results]The results show that the sensitivity of SOI BOX PMOS to radiation dose is better than that of traditional bulk silicon sensor under the same cumulative dose,and the threshold voltage drift of SOI BOX PMOS under irradiation bias.The irradiation change of threshold voltage is almost unaffected by annealing effect.Compared with wide-channel devices,threshold voltage drift of narrow-channel device is more obvious.[Conclusions]Through the design of the SOI BOX PMOSFET(Positive channel Metal Oxide Semiconductor Field-Effect Transistor)structure,important research results such as adjusting the sensitivity of the detector and balancing the relationship with the range have important application value for the development of the next generation of new radiation dose detector.

关 键 词：辐照传感器 基于绝缘体上硅P型金属氧化物半导体场效应晶体管 剂量计 

分 类 号：TL99[核科学技术—核技术及应用]