Interlayer distance effects on absorption coefficient and refraction index change in p-type double-δ-doped GaAs quantum wells  

作　　者：H Noverola-Gamas L M Gaggero-Sager O Oubram 

机构地区：[1]Instituto de Investigaciones en Ciencias Básicas y Aplicadas,Universidad Autónoma del Estado de Morelos Morelos,Cuernavaca 62209,Mexico [2]Division Academica de Ingeniería y Arquitectura,Universidad Juárez Autonoma de Tabasco,Cunduacan 8660,Mexico [3]Centro de Investigación en Ingeniería y Ciencias Aplicadas,Universidad Autónoma del Estado de Morelos,Cuernavaca 62209,Mexico [4]Facultad de Ciencias Químicas e Ingeniería,Universidad Autónoma del Estado de Morelos,Cuernavaca 62209,Mexico

出　　处：《Chinese Physics B》2019年第12期186-190,共5页中国物理B（英文版）

基　　金：Project supported by PISA 2016–1 UJAT and PRODEP Folio UJAT-245 of México

摘　　要：In the framework of the Thomas–Fermi(TF) approach, a model for the p-type double-δ-doped(DDD) system in Ga As is presented. This model, unlike other works in the literature, takes into account that the Poisson equation associated with the system is nonlinear. The electronic structure is calculated for heavy and light holes. The changes in the electronic structure result of the distance d between the doped layers are studied. In particular, the relative absorption coefficient as well as the relative refractive index change is calculated as a function of the incident photon energy for heavy holes. The effect of the interlayer distance exhibits, in the absorption coefficient, a red shift of the peak position and a decrease in amplitude when the distance increases. In addition, the relative refractive index change node has a red shift as well as the interlayer distance increases. The calculations show that the effect of the separation between layers has a greater influence on the linear terms. These results are very important for theoretical calculations and engineering of optical and electronic devices based in δ-doped Ga As.In the framework of the Thomas–Fermi(TF) approach, a model for the p-type double-δ-doped(DDD) system in Ga As is presented. This model, unlike other works in the literature, takes into account that the Poisson equation associated with the system is nonlinear. The electronic structure is calculated for heavy and light holes. The changes in the electronic structure result of the distance d between the doped layers are studied. In particular, the relative absorption coefficient as well as the relative refractive index change is calculated as a function of the incident photon energy for heavy holes. The effect of the interlayer distance exhibits, in the absorption coefficient, a red shift of the peak position and a decrease in amplitude when the distance increases. In addition, the relative refractive index change node has a red shift as well as the interlayer distance increases. The calculations show that the effect of the separation between layers has a greater influence on the linear terms. These results are very important for theoretical calculations and engineering of optical and electronic devices based in δ-doped Ga As.

关 键 词：double delta-doping p-type GaAs layers electronic structure Thomas–Fermi approach nonlinear optical properties 

分 类 号：TN3[电子电信—物理电子学]