电阻元件伏安特性实验研究  

Experimental Research on Volt-ampere Characteristics of Resistor Component

作　　者：元绍霏 YUAN Shaofei(46^th Research Institute,CETC,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所

出　　处：《天津科技》2019年第12期30-32,共3页Tianjin Science & Technology

摘　　要：测量电阻元件伏安特性有多种接线方法。一般情况下,依据比较安培计与待测电阻元件的阻值大小,以减小实验误差为目的,从而选择其中最为合适的电表连接方法。通过实验选择合适的电表连接方法进行测量,得出1 kΩ电阻、光敏电阻的伏安特性曲线,并对这些曲线和数据进行分析。There are various wiring methods for measuring the volt-ampere characteristics of resistor elements.Generally,based on the comparison of the resistance value between the ammeter and the resistor element to be measured,the most suitable method of connecting the meter is selected for the purpose of reducing the experimental error.The volt-ampere characteristic curves of photosensitive resistors and constant resistors are obtained by selecting the appropriate ammeter for measurement,and the curves and data are analyzed.

关 键 词：电路元件 伏安特性 导体 半导体 

分 类 号：TM935.3[电气工程—电力电子与电力传动]