碳化硅单晶材料残余应力检测技术研究进展  

Research Progress on Measurement of Residual Stress in Si C Single Crystal Materials

作　　者：邓亚 张宇民[1] 周玉锋[1] 王伟[1] DENG Ya;ZHANG Yumin;ZHOU Yufeng;WANG Wei(Institute of Composite Material and Structure,Harbin Institute of Technology,Harbin 150080)

机构地区：[1]哈尔滨工业大学复合材料与结构研究所

出　　处：《材料导报》2019年第S02期206-209,共4页Materials Reports

摘　　要：SiC单晶材料被称为第三代宽带隙半导体材料,凭借强度高、化学性质稳定、抗干扰能力强等优势被广泛应用于军工、核能和电子等领域。然而SiC单晶在制备、加工和使用过程中,往往会存在残余应力,这严重影响着单晶材料的质量和使用寿命。为准确评估晶体质量、服役过程中的可靠性和材料寿命,有必要对单晶材料的残余应力及分布规律进行深入研究。本文分析了SiC单晶中残余应力的来源,归纳总结了单晶材料应力检测技术的研究现状,并对SiC单晶材料应力检测方面的未来发展趋势进行了展望。SiC single crystal materials,a typical representative of the third generation wide band-gap semiconductor materials,are widely used in military,nuclear energy and electronic applications due to their high strength,good chemical stability and strong anti-interference ability.However,residual stress often exists in the process of preparation,processing and use of SiC single crystal,which seriously affects the quality and service life of single crystal materials.In order to evaluate crystal quality,reliability and material life precisely,it is necessary to study the stress measurement and distribution of single crystal materials.In this paper,the source of residual stress in SiC single crystal is analyzed,the research status of stress detection technology for single crystal materials is reviewed and the developing trend of stress detection for SiC single crystal material are also discussed.

关 键 词：碳化硅单晶材料 残余应力 光弹性法 X射线衍射法 微拉曼光谱法 

分 类 号：O765[理学—晶体学]