KrF激光刻蚀制备300 nm自支撑聚酰亚胺膜  

Preparation of 300 nm PI Self-supporting Film Using KrF Laser Ablation

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作  者:刘仁臣 陆静 LIU Renchen;LU Jing(Physics Center of Zhuhai College,Jilin University,Zhuhai 519041)

机构地区:[1]吉林大学珠海学院物理教学中心

出  处:《材料导报》2019年第S02期580-583,共4页Materials Reports

基  金:广东省普通高校重点科研平台和科研项目(2018KTSCX306);吉林大学珠海学院创新培育工程重点项目(2018XJCQSQ047);高等教育教学研究与改革项目(ZLGC20191004,2019JZDJ034)~~

摘  要:本工作探讨了微纳米量级聚酰亚胺(PI)自支撑薄膜的制备。以4,4′-二氨基二苯醚(ODA)和均苯四甲酸二酐(PMDA)为单体合成聚酰胺酸(PAA)溶液。经热亚胺化后脱膜得到厚度为900 nm的自支撑PI薄膜。亚胺化程度用傅里叶变换红外光谱仪(FT-IR)测试,表面形貌用透射式显微镜观测。结果显示,在低于250℃下制备的ZnO薄膜适合作为脱膜剂;采用KrF准分子激光对薄膜刻蚀,当能量密度为45 mJ/cm^2时刻蚀110个脉冲,得到了表面平整且厚度为300 nm的自支撑PI薄膜。To discuss the preparation of micro-nano polyimide(PI)self-supporting film,polyamic acid(PAA)solution were synthesized by using pyro-mellitic dianhydride and 4,4′-oxydianiline as monomers.Then 900 nm self-supporting PI film acquired through thermal imidization and demolding.Degree of imidization was investigated with Fourier transform infrared(FT-IR)spectroscopy,surface morphology was observed by projective microscope.Results showed that ZnO thin film sputtered less than 250℃ was the optimum demolder and KrF excimer laser(wavelength:248 nm)etched PI film 110 pulses at 45 mJ/cm^2 laser fluence,300 nm self-supporting PI film would be acquired.

关 键 词:聚酰亚胺 自支撑 脱膜 激光刻蚀 

分 类 号:O436.1[机械工程—光学工程]

 

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