Improvement of tunnel compensated quantum well infrared detector  

作　　者：Chaohui Li Jun Deng Weiye Sun Leilei He Jianjun Li Jun Han Yanli Shi 

机构地区：[1]Key Laboratory of Optoelectronics Technology,Faculty of Information Technology,Beijing University of Technology,Beijing 100124,China [2]School of Physics&Astronomy,Yunnan University,Kunming 650091,China

出　　处：《Journal of Semiconductors》2019年第12期142-145,共4页半导体学报（英文版）

基　　金：supported by Beijing Natural Science Foundation (No. 4182011);the Development Foundation for Optoelectronics Technology Lab, Ministry of Education (No. PXM 2018_014204_500020);National Natural Science Foundation of China (No. 61751502)

摘　　要：To reduce the difficulty of the epitaxy caused by multiple quantum well infrared photodetector(QWIP)with tunnel compensation structure,an improved structure is proposed.In the new structure,the superlattices are located between the tunnel junction and the barrier as the infrared absorption region,eliminating the effect of doping concentration on the well width in the original structure.Theoretical analysis and experimental verification of the new structure are carried out.The experimental sample is a two-cycle device,each cycle contains a tunnel junction,a superlattice infrared absorption region and a thick barrier.The photosurface of the detector is 200×200μm^2 and the light is optically coupled by 45°oblique incidence.The results show that the optimal operating voltage of the sample is-1.1 V,the dark current is 2.99×10^-8A,and the blackbody detectivity is1.352×10^8 cm·Hz^1/2·W^-1at 77 K.Our experiments show that the new structure can work normally.To reduce the difficulty of the epitaxy caused by multiple quantum well infrared photodetector（QWIP） with tunnel compensation structure,an improved structure is proposed.In the new structure,the superlattices are located between the tunnel junction and the barrier as the infrared absorption region,eliminating the effect of doping concentration on the well width in the original structure.Theoretical analysis and experimental verification of the new structure are carried out.The experimental sample is a two-cycle device,each cycle contains a tunnel junction,a superlattice infrared absorption region and a thick barrier.The photosurface of the detector is 200×200 μm2 and the light is optically coupled by 45°oblique incidence.The results show that the optimal operating voltage of the sample is-1.1 V,the dark current is 2.99×10-8 A,and the blackbody detectivity is1.352×108 cm·Hz1/2·W-1 at 77 K.Our experiments show that the new structure can work normally.

关 键 词：infrared detector tunnel compensation SUPERLATTICE 

分 类 号：TN2[电子电信—物理电子学]