微波功率晶体管增益-频率研究  

Study on Gain-Frequency of Microwave Power Transistor

作　　者：刘秋妤 李媛 LIU Qiuyu;LI Yuan(College of New Energy,Bohai University,Jinzhou 121013,China)

机构地区：[1]渤海大学新能源学院

出　　处：《微处理机》2019年第6期11-15,共5页Microprocessors

摘　　要：电流放大倍数与特征频率是衡量微波晶体管电学性能的重要参数,二者之间存在相互制约的关系。利用TCAD半导体器件仿真软件对双极型硅微波晶体管结构、工艺及输出特性进行仿真研究。以提高硅微波晶体管增益带宽积为目标,着重研究外延层掺杂浓度及少子寿命、基区掺杂浓度、发射区掺杂浓度、基极重掺杂接触区对器件特征频率和电流放大倍数的影响。仿真表明对外延层掺杂浓度、基区注入剂量、发射区注入剂量的合理调节能够同时提高电流放大倍数和特征频率,进而提高微波晶体管增益带宽积。研究结果对硅微波晶体管的材料选择及器件设计提供了有价值的参考信息。Current amplification factor and characteristic frequency are important parameters to measure the electrical performance of microwave transistors,and there is a mutual restriction relationship between them.The structure,process and output characteristics of bipolar silicon microwave transistor are simulated by TCAD semiconductor device simulation software.In order to improve the gain bandwidth product of silicon microwave transistors,the effects of epitaxial layer doping concentration and minority carrier lifetime,base doping concentration,emitter doping concentration,and base heavily doped contact region on the characteristic frequency and current amplification factor of the device are emphatically studied.Simulation shows that reasonable adjustment of doping concentration of epitaxial layer,implantation dose of base region and implantation dose of emitter region can improve current amplification factor and characteristic frequency at the same time,thus improving gain bandwidth product of microwave transistor.The study results provide valuable reference information for material selection and device design of silicon microwave transistors.

关 键 词：双极型晶体管 微波晶体管 电流放大倍数 特征频率 TCAD仿真 

分 类 号：TN385[电子电信—物理电子学]