全耗尽SOI器件源/漏区抬升结构的形成（英文）  

Formation of the Raised Source/Drain Structure of FDSOI Devices

作　　者：田明 宋洋 雷海波 Tian Ming;Song Yang;Lei Haibo(Shanghai Huali Integrated Circuit Corporation,Shanghai 201318,China)

机构地区：[1]上海华力集成电路制造有限公司

出　　处：《微纳电子技术》2019年第12期970-977,共8页Micronanoelectronic Technology

基　　金：Shanghai Huali Integrated Circuit Corporation within the project of FDSOI program

摘　　要：介绍了在全耗尽绝缘体上硅(FDSOI)结构上,通过在SOI表面外延生长形成金属氧化物半导体场效应晶体管(MOSFET)源/漏区抬升结构的方法。研究了不同的工艺参数对外延生长的影响,从而在合适的掺杂浓度下得到均匀的外延生长形貌。提出了两种新的途径来控制SOI的厚度:采用一种新的方法生长垫氧层,以及在源漏区外延生长前,在衬底外延生长硅薄膜层,从而补偿工艺导致的SOI损耗。这两种新的方法使SOI厚度增加了约5 nm。工艺优化后的FDSOI器件沟道厚度约为6 nm,源漏外延层厚度为20~30 nm。最后,阐述了外延成分对器件电学性能的影响。The formation method of the metal-oxide-semiconductor field-effect transistor(MOSFET)with the raised source/drain(S/D)structure on the fully depleted silicon-on-insulator(FDSOI)structure by the epitaxial growth on the SOI surface was introduced.The effects of various process parameters on the epitaxial growth were studied in order to obtain uniform epitaxial morphology with proper doping concentration.Two novel approaches were proposed to control the SOI thickness,i.e.the use of a new pad oxide scheme and compensation of the SOI loss caused by the process through the epitaxial growth of a thin Si layer before the formation of the raised S/D structure.The SOI thickness can be increased by about 5 nm by using these two novel methods.The channel thickness and S/D epitaxial layer thickness of the optimized FDSOI device are about 6 nm and 20-30 nm,respectively.Finally,the influence of the epitaxial composition on device performances was also investigated.

关 键 词：全耗尽绝缘体上硅(FDSOI) 金属氧化物半导体场效应晶体管(MOSFET) 源/漏区抬升结构 外延生长 绝缘体上硅(SOI)损耗 

分 类 号：TN386.1[电子电信—物理电子学]