氧化锌薄膜体声波谐振器制作重复性和均匀性  

Process Repeatability and Uniformity of ZnO-Based FBARs

作　　者：陈熙 段力 翁昊天 付学成 杨志 张亚非 刘千慧 陈益钢 高明[3] 张虎[3] Chen Xi;Duan Li;Weng Haotian;Fu Xuecheng;Yang Zhi;Zhang Yafei;Liu Qianhui;Chen Yigang;Gao Ming;Zhang Hu(Center for Advanced Electronic Materials and Devices,Department of Micro/Nano Electronics,School of Electronic In formation and Electrical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China;Department of Electronic Information M aterials,School of Materials Science and Engineering,Shanghai University,Shanghai 200444,China;School of Materials Science and Engineering,Beihang University,Beijing 100191,China)

机构地区：[1]上海交通大学电子信息与电气工程学院微纳电子学系先进电子材料与器件平台,上海200240 [2]上海大学材料科学与工程学院电子信息材料系,上海200444 [3]北京航空航天大学材料科学与工程学院,北京100191

出　　处：《微纳电子技术》2019年第12期984-991,共8页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(61971284,61671299)

摘　　要：通过磁控溅射靶材的成分调控和一系列优化过的微电子机械系统(MEMS)工艺,成功研制了基于氧化锌(ZnO)压电薄膜的固体装配型薄膜体声波谐振器(FBAR)。通过使用性能优异的靶材,所得到的器件谐振性能良好。在同一种工艺条件下得到多个硅片的中心处FBAR的谐振频率为2.365~2.379 GHz,具有较好的重复性。并且,同一硅片不同位置的器件性能还具有优异的均匀性,S11的平均相对误差很小。尤其谐振频率可以控制在2.359~2.410 GHz,相比之前的1.8~2.4 GHz,其均匀性有了明显的提升。同一硅片上9个FBAR谐振频率的平均相对误差能够低至0.256%。The solid-mounted film bulk acoustic resonator(FBAR)based on zinc oxide(ZnO)piezoelectric film was successfully developed by the composition control of magnetron sputtering target and a series of optimized micro-electromechanical system(MEMS)processes.The fabricated device has outstanding resonance performances by using a target with excellent performances.The resonance frequencies of the FBARs at the center of some Si wafers obtained under the same process condition are 2.365-2.379 GHz,indicating that the device performances have good repeatability.In addition,the performances of the devices for the same Si wafer at differentpositions have good uniformity,and the average relative error of the S11is small.In particular,the resonant frequency can be controlled at 2.359-2.410 GHz,which has a significant improvement in uniformity compared with the previous 1.8-2.4 GHz.The average relative error of the resonant frequencies for 9 FBARs in the same Si wafer can be as low as 0.256%.

关 键 词：薄膜体声波谐振器(FBAR) 氧化锌(ZnO) 谐振频率 射频磁控溅射 集成电路 

分 类 号：TN61[电子电信—电路与系统] TN389