基于IGBT的短脉冲大电流开断特性研究  

Study on Short-pulse and Large-current Breaking Characteristics Based on IGBT

作　　者：程显[1,2] 申森林 葛国伟 王华清[1,2] CHENG Xian;SHEN Sen-lin;GE Guo-wei;WANG Hua-qing(Zhengzhou University,Zhengzhou 450001,China;不详)

机构地区：[1]郑州大学电气工程学院,河南郑州450001 [2]河南省输配电装备与电气绝缘工程技术研究中心,河南郑州450001

出　　处：《电力电子技术》2019年第12期74-77,共4页Power Electronics

基　　金：国家自然科学基金(51407163,51777025);中国博士后科学基金(2017M622370)~~

摘　　要：为确定绝缘栅双极型晶体管(IGBT)在直流微网中开断大电流的能力,搭建IGBT短脉冲大电流开断试验平台。在此基于HENFER模型进行IGBT参数的提取,通过Saber软件进行IGBT的电热耦合仿真,搭建额定电压与额定电流600 V/40 A的IGBT测试试验电路,以100μs,200μs,500μs,1 ms等不同的关断时间差进行IGBT大电流开断特性研究。结果表明,随着栅极驱动电压的提高,IGBT的开断能力不能增强,但相应的关断时间差会发生改变。试验规律为中低压领域直流微网中IGBT的应用提供了参考依据,具有一定工程应用意义。In order to determine the ability of insulated gate bipolar transistor(IGBT)to switch on and off large current in DC microgrid,the IGBT short pulse large current switching test platform is established.IGBT parameters are extracted based on HENFER model,electrothermal coupling simulation of IGBT is conducted through saber,IGBT test circuit with rated voltage and rated current 600 V/40 A is built,IGBT large-current switching characteristics are studied with 100μs,200μs,500μs,1 ms and other different turn-off time differences.The results show that the switching capacity of IGBT cannot be enhanced with the increase of the gate drive voltage,but the corresponding switching time difference will change.The experimental rules provide reference for IGBT application in DC microgrid in the field of medium and low voltage.

关 键 词：绝缘栅双极型晶体管 驱动电压 大电流开断 

分 类 号：TN32[电子电信—物理电子学]