双指数和振荡操作冲击电压下SF6气隙缺陷局部放电行为分析  

Analysis on Partial Discharges Behaviors in SF6 Gas Filled Void Under Standard Aperiodic and Oscillating Switching Impulses

作　　者：周洁睿 任明[1] 黄文广 董明[1] 阙波[3] 何文林 ZHOU Jierui;REN Ming;HUANG Wenguang;DONG Ming;QUE Bo;HE Wenlin(State Key Laboratory of Electrical Insulation&Power Equipment,Xi'an Jiaotong University,Xi'an 710049,China;State Grid Zhejiang Electric Power Testing and Research Institute,Hangzhou 300014,China;State Grid Zhejiang Electric Power Corporation,Hangzhou 310007,China)

机构地区：[1]西安交通大学电力设备电气绝缘国家重点实验室,西安710049 [2]国网浙江电力科学研究院,杭州300014 [3]国网浙江省电力公司,杭州310007

出　　处：《高电压技术》2019年第12期3970-3977,共8页High Voltage Engineering

基　　金：国家电网公司科技项目(5211DS16000G);国家重点研发计划(2017YFB0902705);国家自然科学基金(51777157)~~

摘　　要：为深入探索标准操作冲击及振荡操作冲击激励下绝缘内部气隙局部放电行为和产生机制,采用标准操作冲击(SI)和振荡操作冲击(OSI)作为激励源,对环氧树脂内部气隙缺陷的局部放电行为进行了试验研究,并在此基础上对冲击电压下的放电时延进行了统计与理论分析。试验研究发现:2种操作冲击电压下放电电流脉冲随施加电压的上升而呈现不同阶段特征;首次放电对后续放电的放电频率、幅值和分布等特征有显著的影响;将施加电场变化过程的影响引入放电时延理论计算中,对所得到的伏秒特性(U-t)曲线与试验统计分布进行比较,结果表明70%的统计结果分布在理论曲线的附近,解释了操作冲击激励下气隙放电行为的一般性规律。In order to explore the partial discharge(PD)behavior and generation mechanism of SF6 gas filled void in insulation under the excitation of standard impulses(SI)and oscillating switching impulses(OSI),SI and OSI are used as excitation sources to study the PD behavior of gas filled void defects in epoxy resin.On the basis of obtained results,the experimental analysis and theoretical calculation of the first discharge delay under the impulse voltage are carried out.The experimental results show that the discharge current pulses under the two kinds of impulse voltages will exhibit different stages as the voltage level rises.The first discharge has a significant effect on the discharge frequency,amplitude and distribution of the subsequent discharge.By introducing the influence of electric field change process into the theoretical calculation of discharge lag,the obtained U-t curve is compared with the experimental statistical distribution.The results show that 70%of the statistical results distribute near the theoretical curve,which explains the general law of SF6 filled void discharge behavior under excitation of SI and OSI.

关 键 词：局部放电 气隙缺陷 GIS SF6 操作冲击电压 首次放电 

分 类 号：TM9[电气工程—电力电子与电力传动]