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作 者:刘紫璇 刘兴辉[1] 王绩伟[1] 牛博 孙嘉斌 LIU Zixuan;LIU Xinghui;WANG Jiwei;NIU Bo;SUN Jiabin(College of Physics,Liaoning University,Shenyang 110036,P.R.China;Beijing Chongxin Communication Technology Co.,Ltd.,Beijing 100041,P.R.China)
机构地区:[1]辽宁大学物理学院,沈阳110036 [2]北京崇新通信技术有限公司,北京100041
出 处:《微电子学》2019年第6期798-801,共4页Microelectronics
基 金:国家自然科学基金资助项目(11574124);辽宁省教育厅研究生教育教学改革项目(辽教函[2017]24号)
摘 要:提出一种占空比可调的高速电平转换电路,能够将频率高达1.33 GHz的低电压域信号提升至高电压域输出。在传统电平转换电路的基础上,增加了占空比调节电路,使得电路工作在不同I/O域时,通过调整接入的PMOS管数量来间接调整控制管的宽长比,进而实现占空比可调。增加了快速响应电路,引入首尾相接的反相器组,通过正反馈功能,加速实现电平转换。基于Global Foundry 14 nm CMOS工艺进行电路设计,采用SPECTRE软件进行仿真。仿真结果表明,该电路能够实现从0.9 V核心电压到2.5 V I/O电压的稳定转换,传播延时为225 ps,占空比为49.63%。当高电压域电压变换为1.8 V后,通过占空比调节电路,使占空比仍可保持在50%左右。A high speed level-shifting circuit with adjustable duty cycle was proposed to boost the low voltage domain signals with a frequency up to 1.33 GHz to the high voltage domain outputs.On the basis of traditional level-shifting circuits,a duty cycle regulating circuit was introduced,so that when the level-shifting circuit worked in different I/O domains,the duty cycle could be adjusted by connecting different numbers of PMOS transistors to the circuit,that was equivalent to adjust the width-length ratio of the control transistors.By adding a fast response circuit,in which the inverter group was connected end to end,the level conversion could be accelerated by the positive feedback function.The level-shifting circuit was designed in the Global Foundry 14 nm CMOS process and simulated by SPECTRE software.The simulation results showed that the circuit could achieve a stable conversion from 0.9 V core voltages to 2.5 V I/O voltages,with a propagation delay of 225 ps and a duty cycle of 49.63%.When the voltage in high voltage domain was changed to 1.8 V,the duty cycle could still be maintained at about 50%by the duty cycle regulating circuit.
关 键 词:电平转换电路 占空比 多电压域 14 nm CMOS工艺
分 类 号:TN432[电子电信—微电子学与固体电子学]
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