CMOS外延工艺下MLSCR器件鲁棒性的研究  

Research on Robustness of MLSCR Devices in CMOS Epitaxial Process

作　　者：何刚 刘继芝[1] 杨凯[1] HE Gang;LIU Jizhi;YANG Kai(School of Microelec.and Solid-State Elec.,University of Electronic Science and Technology of China,Chengdu 610054,P.R.China)

机构地区：[1]电子科技大学微电子与固体电子学院

出　　处：《微电子学》2019年第6期834-837,共4页Microelectronics

基　　金：国家自然科学基金资助项目(61874098);中央高校基本业务费资助项目(ZYGX2018J025);四川省平台建设资助项目(18PTDJ0053)

摘　　要：传统的改进型横向SCR(MLSCR)器件能够在最小的面积下实现最大的静电放电(ESD)鲁棒性,被广泛应用于ESD防护领域。但是,采用55 nm CMOS外延工艺制作的MLSCR器件会出现鲁棒性剧烈下降且回滞即失效的问题。对器件版图结构进行调整,并进行多组实验,验证了器件失效机理。实验结果表明,在55 nm CMOS外延工艺下,阱的方块电阻阻值大大降低,导致主电流泄放通道难以开启,从而出现MLSCR器件不能开启的问题。Traditional improved lateral SCR(MLSCR)devices are widely used in the field of electrostatic discharge(ESD)protection to achieve maximum ESD robustness with minimal area.However,in the 55 nm CMOS epitaxial process,the failure of MLSCR devices occurs immediately after the snapback,thus the robustness of MLSCR devices is greatly reduced.In order to investigate the failure mechanism,experiments with the device layout structure adjusted were presented.The experimental results showed that the main current discharge path of the device was difficult to turn on due to the sheet resistance reduced greatly in the 55 nm CMOS epitaxial process,and as a consequence the MLSCR could not be triggered well.

关 键 词：MLSCR 静电放电 失效分析 

分 类 号：TN335[电子电信—物理电子学]