总剂量辐射中偏压对功率管的影响研究  

Study on the Bias Influence of Power MOSFET in Total Dose Radiation

作　　者：周枭 罗萍[1] 凌荣勋 吴昱操 蒋鹏凯 ZHOU Xiao;LUO Ping;LING Rongxun;WU Yucao;JIANG Pengkai(State Key Lab.of Elec.Thin Films&Integr.Dev.,Univ.of Elec.Sci.and Technol.of China,Chengdu 610054,P.R.China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室

出　　处：《微电子学》2019年第6期842-846,共5页Microelectronics

基　　金：国家自然科学基金联合基金(NSAF)资助项目(U1630117)

摘　　要：基于漂移扩散方程的理论模型,研究了总剂量辐射效应与偏压条件的关系,逐个分析了功率管中常用偏压条件对总剂量效应的影响。根据辐照过程中SiO2内部和Si-SiO2界面处感生的陷阱电荷的积累情况,推测出较恶劣的偏压条件。将40 V耐压的NLDMOS和5 V耐压的NMOS功率管在0.35μm商用BCD工艺下进行了流片,并在不同偏压条件下进行了Co60总剂量辐照实验,对总剂量辐照中的偏压效应进行了测试验证。实验结果证实功率管在开态偏压下的辐射退化更明显。The relationship between total ionizing dose effects and bias configurations was studied based on the models of drift-diffusion equations.The influences of common bias conditions for the power MOSFET on the total ionizing dose effects were analyzed.According to the accumulation of trap charges in SiO2 and Si-SiO2 interface during irradiation,the worst-case bias conditions were inferred.A 40 V N-channel LDMOS and a 5 V N-channel power MOSFET were designed and fabricated in a 0.35μm commercial BCD process.Co60 gamma irradiation test was carried out under different configurations to compare the different degradations.The bias effects in total dose irradiation were verified.The radiation degradation of power MOSFET was confirmed more obvious under ON-state bias.

关 键 词：总剂量辐射效应 偏压 MOS功率管 退化 

分 类 号：TN386.1[电子电信—物理电子学] TN433