背板掺杂与窗口位置对SELBOX器件调控研究  

Investigation of Back-Plane Doping and BOX Window Position’s Adjustment on SELBOX MOSFETs

作　　者：黄琴 刘人华 孙亚宾 李小进[1] 石艳玲[1] 王昌峰 廖端泉 田明 HUANG Qin;LIU Renhua;SUN Yabin;LI Xiaojin;SHI Yanlin;WANG Changfeng;LIAO Duanquan;TIAN Ming(Dept.of Elec.Engineer.,School of Inform.Sci.and Technol.,East China Normal University,Shanghai 200241,P.R.China;Shanghai Huali Microelectronics Corp.,Shanghai 201203,P.R.China)

机构地区：[1]华东师范大学信息科学技术学院电子工程系,上海200241 [2]上海华力微电子有限公司,上海201203

出　　处：《微电子学》2019年第6期862-867,共6页Microelectronics

基　　金：国家科技重大专项资助项目(2016ZX02301003);国家自然科学基金资助项目(61574056,61704056);上海扬帆计划资助项目(YF1404700);上海市科学技术委员会资助项目(14DZ2260800)

摘　　要：介绍了一种采用HK-first MG-last FDSOI工艺制作的选择性埋氧(SELBOX)器件。利用TCAD,对不同背板掺杂类型和埋氧层窗口位置的SELBOX器件进行直流仿真分析,再与FDSOI器件的直流参数进行比对,得到SELBOX器件的直流性能对背板掺杂类型和埋氧层窗口位置的依赖关系。进一步分析SELBOX器件的下表面电势分布,发现背板掺杂类型和埋氧层窗口位置对器件直流性能的物理调控机制。仿真结果表明,背板掺杂类型决定SELBOX器件的直流性能能否得到增强,埋氧层窗口位置与漏端的距离决定器件直流性能增强的程度。A selective buried oxide(SELBOX)MOSFET,which maintained process compatibility with HK-first MG-last FDSOI,was presented.By simulating the direct current(DC)performance of SELBOX under different back-plane(BP)doping type and BOX window’s position through TCAD,and comparing with that of FDSOI MOSFETs,the dependence between the device’s DC performance and the two factors noted before was illustrated.The bottom surface electric potential distribution differences among those MOSFETs were compared for further analysis to investigate the underlying physical mechanisms.Results showed that the BP doping type determined whether the SELBOX MOSFETs’DC performance could be enhanced,and the distance between BOX window and drain side determined the degree of DC performance enhancement.

关 键 词：FDSOI 埋氧层窗口位置 背板掺杂 物理机制 

分 类 号：TN387[电子电信—物理电子学]