新型硅压阻式压力传感器的设计、制作与性能补偿研究  

Research on Design,Fabrication and Performance Compensation of Novel Silicon Piezoresistive Pressure Sensor

作　　者：王银 张加宏[1,2,3] 李敏[2,3] 陈虎 冒晓莉[2,3] WANG Yin;ZHANG Jiahong;LI Min;CHEN Hu;MAO Xiaoli(Jiangsu Collaborative Innovation Center on Atmospheric Environment and Equipment Technology,Nanjing University of Information Science and Technology,Nanjing 210044,China;Jiangsu Key Laboratory of Meteorological Observation and Information Processing,Nanjing University of Information Science and Technology,Nanjing 210044,China;School of Electronic and Information Engineering,Nanjing University of Information Science and Technology,Nanjing 210044,China)

机构地区：[1]南京信息工程大学,江苏省大气环境与装备技术协同创新中心,南京210044 [2]南京信息工程大学,江苏省气象探测与信息处理重点实验室,南京210044 [3]南京信息工程大学电子与信息工程学院,南京210044

出　　处：《电子器件》2019年第6期1371-1377,共7页Chinese Journal of Electron Devices

基　　金：国家自然科学基金项目(61306138,41605120);江苏高校品牌专业建设工程项目(TAPP);江苏省高等学校大学生实践创新训练计划项目(201710300021Z)

摘　　要：为兼顾高灵敏度与低非线性误差,针对性地设计和研究了一种量程为105 kPa的新型MEMS硅压阻式压力传感器,该传感器通过部分刻蚀SOI硅膜引入了凸起的压敏电阻和L形半岛结构。首先利用ANSYS有限元模拟仿真分析了传感器的特性、确定了其参数,然后通过MEMS工艺制作了压力传感器芯片并对其进行了封装与测试。实验结果表明,常温下MEMS硅压阻式压力传感器的灵敏度为0.056 mV/(V·kPa),非线性误差为±1.12%。最后采用最小二乘函数校正法对传感器进行了非线性校正和迟滞误差补偿,性能补偿后MEMS硅压阻式压力传感器在全量程范围内的整体误差小于±0.24%FS。In order to balance high sensitivity and low nonlinearity error,a novel MEMS silicon piezoresistive pressure sensor with a range of 105 kPa was designed and investigated.This sensor introduces convex piezoresistive structures and L-shaped peninsula structures by partially etching the SOI silicon film.Firstly,the characteristics of the sensor were analyzed by ANSYS finite element simulation,and the sensor parameters were determined.Then the pressure sensor chip was fabricated by MEMS process,and next was packaged and tested.The experimental results show that the sensitivity of the MEMS silicon piezoresistive pressure sensor at room temperature is 0.056 mV/(V·kPa),and nonlinear error is±1.12%.Finally,the sensor is nonlinearly corrected and hysteresis error compensated by the least squares function correction method.The performance compensated MEMS silicon piezoresistive pressure sensor has an overall error of less than±0.24%FS.

关 键 词：MEMS压阻式压力传感器 灵敏度 有限元分析 非线性校正 迟滞误差补偿 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TN911.7[自动化与计算机技术—控制科学与工程]