一种NMOS高侧驱动电路  

A NMOS based high side drive circuit

作　　者：刘辉 刘进 徐成栋 LIU Hui;LIU Jin;XU Chengdong(College of Electrical Information Engineering,Jilin University of Architecture and Technology,Changchun 130114,China)

机构地区：[1]吉林建筑科技学院电气信息工程学院

出　　处：《长春工业大学学报》2019年第6期593-599,共7页Journal of Changchun University of Technology

基　　金：国家重大科学仪器设备开发专项项目(2014YQ120351);吉林省大学生创新创业训练计划项目(吉教高字[2018]30号3845)

摘　　要：采用开关变压器隔离供电的方法解决了驱动信号电平偏移和高侧NMOS驱动电路的悬浮供电问题,从而低侧单片机I/O口可以控制高侧NMOS的导通和截止。分析了高侧NMOS的导通条件,进而控制其可靠导通。Switch Transformer isolated power supply is applied to solve both the driving signal level shift and suspension power. Therefore, the I/O at low side of microcomputer can control the turn on-off at high side of NMOS. The conduction conditions of the high side is analyzed for reliable being controlled.

关 键 词：高侧驱动 隔离供电 开关变压器 

分 类 号：TP710.2[自动化与计算机技术—检测技术与自动化装置]