LiF对热压烧结YAG陶瓷的影响及其阻抗谱分析  

Effect of LiF on Hot-pressing Sintered YAG Ceramics and Analysis of the Impedance Spectroscopy

作　　者：陆艺莹 雷文[1,2] 王飞 楼熠辉[1,2] 吕文中 LU Yiying;LEI Wen;WANG Fei;LOU Yihui;LYU Wenzhong(School of Optical and Electronic Information,Huazhong University of Science and Technology,Wuhan 430074,China;Key Laboratory of Electronic Information Functional Materials,Ministry of Education,Huazhong University of Science and Technology,Wuhan 430074,China)

机构地区：[1]华中科技大学光学与电子信息学院,湖北武汉430074 [2]华中科技大学电子信息功能材料教育部重点实验室,湖北武汉430074

出　　处：《压电与声光》2019年第6期797-801,共5页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(51772107)

摘　　要：该文以氟化锂(LiF)为烧结助剂,通过热压烧结(HP)的方式制备出钇铝石榴石(Y3Al5O12,YAG)透明陶瓷。表征了YAG透明陶瓷的光学性能及微观结构,并结合电化学阻抗谱进一步分析了LiF对热压烧结YAG陶瓷性能的影响。结果表明,LiF作为烧结助剂有利于促进YAG陶瓷晶粒的增长,有助于提高YAG陶瓷的致密度;阻抗谱分析显示,添加较多LiF的YAG陶瓷的晶界电阻较大,这表明LiF有助于晶界处“碳污染”等杂质的排除。当w(LiF)=1.0%时,通过真空热压烧结在1450℃、50MPa保温1h可以制备出高性能的YAG透明陶瓷,样品在400nm波长处直线透过率为58%,在1100nm波长处直线透过率为68%,在2500nm波长处直线透过率达到75%。The transparent Y 3Al 5O 12(YAG)ceramics were fabricated by hot-pressing sintering(HP)with LiF as sintering aid in this work.The optical properties and microstructure of YAG transparent ceramics were characterized,and the effects of LiF on the properties of hot-pressing sintered YAG ceramics were further analyzed by electrochemical impedance spectroscopy.The results show that LiF as sintering aid was beneficial to promote the grain growth of YAG ceramic and helped to increase the density of YAG ceramics.The impedance spectroscopy analysis showed that the grain boundary resistance of YAG ceramics with more LiF added is higher,which indicated that LiF contributed to the elimination of impurities such as“carbon contamination”at the grain boundary.When w(LiF)=1.0%,the YAG transparent ceramics with good properties can be prepared by vacuum hot pressing at 1450℃and 50 MPa for 1 h.The in-line transmittance of the sample was 58%at the wavelength of 400 nm,68%at the wavelength of 1100 nm,and 75%at the wavelength of 2500 nm.

关 键 词：Y3Al5O12(YAG)透明陶瓷 热压烧结 LIF 阻抗谱 光学性能 

分 类 号：TN384[电子电信—物理电子学] TM28[一般工业技术—材料科学与工程]