喷墨打印垂直有机光晶体管及其性能优化  

Preparation and Performance Optimization of Inkjet-printed Vertical Organic Phototransistor

作　　者：张国成[1,2] 张平均[3] 何兴理 张红[2] ZHANG Guo-cheng;ZHANG Ping-jun;HE Xing-li;ZHANG Hong(Research Center for Microelectronics Technology,Fujian University of Technology,Fuzhou 350108,China;Institute of Optoelectronic Display,National&Local United Engineering Lab of Flat Panel Display Technology,Fuzhou University,Fuzhou 350108,China;College of Information Science and Engineering,Fujian University of Technology,Fuzhou 350108,China)

机构地区：[1]福建工程学院微电子技术研究中心,福州350108 [2]福州大学平板显示技术国家地方联合工程实验室,福州350108 [3]福建工程学院信息科学与工程学院,福州350108

出　　处：《光子学报》2019年第12期104-113,共10页Acta Photonica Sinica

基　　金：国家重点研发计划(No.2016YFB0401103);福建省自然科学基金(Nos.2017J05097,2018J01535);福建省中青年教育科研项目(No.JAT160334);福州大学校人才基金(No.XRC-17047)~~

摘　　要：通过旋涂透明源极并在其上采用喷墨打印的方式制备有源层及源漏电极,从而得到一种垂直结构光晶体管,并获得了较好的光电性能,其响应率为~1500 A/W,探测率可达1.6×10^14 Jones.向有源层中掺杂一定比例的电子捕获材料PCBM,使有源层中光生空穴复合减小,光生电流增大,从而进一步提高其光探测性能.研究发现当掺杂5wt%电子捕获材料时,垂直结构光晶体管性能达到最优,响应率为~6000 A/W,探测率可达1.4×10^15 Jones.The source electrode and drain electrode are prepared with inkjet printed active layer on the spin-coated transparent source electrode,obtaining a vertical phototransistor with high photoresponsivity of^1500 A/W and high detectivity of^1.6×10^14 Jones.By doping electron capture materials PCBM into the active layer,the recombination of photo-generated holes in the active layer decreases and the photo-generated current increases.Thus the photodetector performance is improved further.It is found that when the electron capture material doping is 5wt%,the performance of phototransistor is better.The photoresponsivity is boosted to about 6000 A/W and the detectivity is up to 1.4×10^15 Jones.

关 键 词：喷墨打印 垂直结构晶体管 超短沟道 电子捕获 光晶体管 

分 类 号：TN321.5[电子电信—物理电子学]