基于2ED020I12-FA隔离芯片的IGBT驱动电路研究与设计  

Research and Design of IGBT Drive Circuit Based on 2ED020I12-FA

作　　者：李祥来[1] 颜渐德[1] 谢卫才[1] LI Xiang-lai;YAN Jian-de;XIE Wei-cai(College of Electrical and Information Engineering, Hunan Institute of Engineering, Xiangtan 411104, China)

机构地区：[1]湖南工程学院电气信息学院,湘潭411104

出　　处：《湖南工程学院学报（自然科学版）》2020年第1期20-23,共4页Journal of Hunan Institute of Engineering(Natural Science Edition)

基　　金：湖南省教育厅科研资助项目(18C0707)、(18A348).

摘　　要：绝缘栅双极晶体管(IGBT)驱动电路设计的优劣直接关系到电力电子设备运行的性能.高性能的驱动电路能够很好的驱动功率器件,使其准确地工作于导通或截止,保证功率器件高效、稳定运行.文中分析了IGBT驱动电路的设计要求,结合英飞凌磁耦隔离芯片2ED020I12-FA的工作特点,设计了基于2ED020I12-FA的IGBT驱动电路.实验结果表明,该驱动电路具有结构简单、稳定可靠等优良特性.The driving circuit is a bridge between the control system and the power device.The design of the insulated gate bipolar transistor(IGBT)driving circuit is directly related to the performance of the power electronic device.The high-performance drive circuit can drive the power device well so that it can work accurately on or off,ensuring efficient and stable operation of the power device.Firstly,the design requirements of IGBT drive circuit are analyzed.Combined with the working characteristics of Infineon’s magnetic coupling isolation chip 2ED020I12-FA,an IGBT drive circuit based on 2ED020I12-FA is designed.The test results show that the drive circuit has superior performance and good reliability.

关 键 词：驱动电路 IGBT 磁耦隔离 

分 类 号：TN710.2[电子电信—电路与系统]