以g-C3N4为原料快速合成Ti2Al（C,N）陶瓷及其层状生长机制研究  

Rapid Synthesis and Layered Growth Mechanism of Ti2Al（C,N） Using g-C3N4 as Raw Material

作　　者：李啸轩 张强 朱春城[1] LI Xiaoxuan;ZHANG Qiang;ZHU Chuncheng(College of Chemistry and Chemical Engineering,Harbin Normal University,Harbin 150025,China)

机构地区：[1]哈尔滨师范大学化学化工学院

出　　处：《材料导报》2020年第4期32-36,共5页Materials Reports

基　　金：黑龙江省自然科学基金重点项目(ZD2017011);国家自然科学基金(51572064)~~

摘　　要：以Ti、Al和g-C3N4粉体为原料,采用快速、能耗低的自蔓延高温合成法制备出Ti2Al(C,N)。当Ti、Al和g-C3N4的物质的量比为2∶1.05∶1时,Ti2Al(C,N)的含量最高。在反应过程中,Al的熔化促进了Ti(s)和g-C3N4(s)反应生成Ti(C,N)(s),在降温阶段Ti(s)和Al(l)形成TiAl(s),之后Ti(C,N)(s)和TiAl(s)反应生成片层状的Ti 2Al(C,N)(s)。Ti2Al(C,N)晶粒的层状生长研究表明,Ti2Al(C,N)为二维生长机制,以阶梯状生长模式生长;Ti2Al(C,N)大晶粒的片层存在向内的扩展方式;杂质小颗粒的存在对Ti2Al(C,N)片层的横向扩展产生阻碍作用。Ti2Al(C,N)was prepared from Ti,Al and g-C3N4 powders by fast,low-energy self-propagating high temperature synthesis.When the molar ratio of Ti,Al and g-C3N4 is 2∶1.05∶1,the content of Ti2Al(C,N)is the highest.In the reaction,the melting of Al promotes the formation of Ti(C,N)(s)from Ti(s)and g-C3N4(s),Ti(s)and Al(l)form TiAl(s)at the cooling stage,followed by Ti(C,N)(s)and TiAl(s)are subjected to reaction to form a layered Ti 2Al(C,N)(s).The study of the layered growth of Ti2Al(C,N)grains shows that Ti2Al(C,N)is a two-dimensional growth mechanism and grows in a step-like growth mode;the Ti2Al(C,N)large grain layers has an inward lateral spreading mode;the presence of small impurity particles hinders the lateral spreading of the Ti 2Al(C,N)layer.

关 键 词：Ti2Al(C N) 自蔓延高温合成 层状生长机制 

分 类 号：TG148[一般工业技术—材料科学与工程]